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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Applications of Federated Learning in Semiconductor Manufacturing [Poster]

As semiconductor manufacturers explore advanced data analytics and modeling techniques and data hungry machine learning models increase in popularity due to their accuracy in solving generalized problems and ability to learn complex relationships, federated learning emerges as a privacy preserving machine learning technique for preserving data privacy and ensuring intellectual property protection. Federated Learning is a machine learning technique focused on training models using distributed data that never needs to be centrally stored, allowing the use of advanced machine learning techniques without compromising data privacy, and in the semiconductor manufacturing industry advanced machine learning techniques can reduce cost and time, but maintaining data privacy is essential to maintaining a competitive advantage. This paper systematically reviews existing literature on applications of federated learning in the semiconductor manufacturing industry with a focus on identifying common themes, algorithms, and gaps within the literature to drive future research directions. The findings reveal five key themes, including improvements in quality assurance, virtual models, privacy preservation, reliable data practices, and emerging trends and developments. By identifying key themes in literature on federated learning and semiconductor manufacturing and analyzing gaps and discussed methodologies, this study highlights several potential future research directions to expand the application of federated learning techniques in the semiconductor manufacturing domain.

42 ENGINEERING↗
DOE OSTI2023

Cleaner Chips: Decarbonization in Semiconductor Manufacturing

The growth of the information and communication technology sector has vastly accelerated in recent decades because of advancements in digitalization and Artificial Intelligence (AI). Scope 1, 2, and 3 greenhouse gas emissions data of the top six semiconductor manufacturing companies (Samsung Electronics, Taiwan Semiconductor Manufacturing Corporation, Micron, SK Hynix, Kioxia, and Intel) were gathered from the publicly accessible Carbon Disclosure Project’s (CDP) website for 2020. Scope 3 emissions had the largest share in total annual emissions with an average share of 52%, followed by Scope 2 (32%) and Scope 1 (16%). Because of the absence of a standardized methodology for Scope 3 emissions estimation, each company used different methodologies that resulted in differences in emissions values. An analysis of the CDP reporting data did not reveal information on strategies implemented by companies to reduce Scope 3 emissions. The use of renewable energy certificates had the largest effect on decarbonization centered on reducing Scope 2 emissions, followed by the deployment of perfluorocarbon reduction technologies to help reduce Scope 1 fugitive emissions. Technology-specific marginal abatement costs of CO2 were also estimated and varied between −416 and 12,215 USD/t CO2 eq., which primarily varied depending on the technology deployed.

42 ENGINEERING↗
DOE OSTI2025

A Data-Agnostic, Continuous Machine Learning Framework for Application in High Energy Physics and Beyond: Phase 1 Final Scientific/Technical Report

This Phase 1 effort has focused on the development of continual learning frameworks for use in machine learning, specifically in the applied context of High Energy Physics (HEP). Machine learning (ML) is a transformative technology by which computers, typically through the use of neural networks, are able to perform tasks with proficiency that rivals or surpasses that of human users. Model Degradation & Catastrophic Forgetting are two undesired phenomena which can occur in ML where the performance of a model degrades when either deployed on novel data streams, or trained on novel data which are sufficiently different than the data the models were initially trained on. A natural example where these sorts of effects can be observed is in the performance of detectors in harsh environments, where the detector signature may change over the lifetime of the detector as it ages and deteriorates — precisely what occurs in the experiments conducted in HEP. Real world HEP data is therefore an excellent test-ground and use-case for Continual Learning paradigms, which are techniques used in ML to counteract these problems. Ensemble learning is one such technique, where multiple smaller models are trained on subsets of the overall data and are ensembled together during inference. The intuition behind this technique is that, although there are shifts in the distributions which govern the incoming data streams, these shifts are not expected to be homogeneous or global. If a sufficient diversity in solutions within the various sub-models has been achieved, then at least one sub-model is expected to retain its performance within the overall ensemble. One further strength of this approach is that the architectures of the various models do not need to be identical, and in fact even different modalities of data can naturally be combined in this way. This work focused on applying ensemble learning techniques to derive results using two main datasets, anomaly detection in HEP data & time-series forecasting in semiconductor manufacturing data. Semiconductor manufacturing involves data with surprising similarity to that of HEP (e.g. wafer maps look very similar to digi-occupancy maps) and Cerium Lab’s prominence within the semiconductor industry makes semiconductor manufacturing a natural opportunity for commercialization of this work. Our efforts have led to two strong results. The first is that we evaluated the proposed ensembling techniques using previously proposed machine learning architectures for use in anomaly detection, namely AutoEncoder based models and their derivatives. We also developed new architectures which have not been evaluated in this context before. In fact, this work marks the first use of Vision Transformers for anomaly detection in HEP. Second, we demonstrated that ensemble learning significantly improves model performance in scenarios prone to degradation, validating its effectiveness across both HEP and semiconductor datasets. These results further support ensemble learning as a powerful strategy for mitigating catastrophic forgetting and maintaining robust performance in evolving data environments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2025

Bowtie Manufacturing Images, Round 1&2

This dataset contains over 3,600 image files of images of a semiconductor manufactured part called 'Bowtie'. The data is grouped into 'accept' and 'reject' but does not contain masks for why the inspector rejected a part. There are further groupings such as different zoom magnifications, types of rejection (e.g. gouge, debris, etc.). Some of the parts have been laminated and are organized as such. For the 2nd round of data also included are Excel spreadsheets which can be used to identify position on the wafer where the images came from. The included PDF has example images and explains this in more detail.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography

Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but faces critical challenges in developing resist materials that achieve high-precision at economically viable throughput. Directed self-assembly (DSA) of block copolymers (BCPs) offers a promising solution for pattern rectification by leveraging thermodynamically determined domain structures to decouple BCP pattern quality from the imperfect original lithographic pattern. This prospective presents an overview of recent progress on the EUV + DSA strategy, covering advances in BCP material design, processing, metrology, and pattern transfer. We highlight recent advances in high-χ BCPs with perpendicular orientation and domain spacings compatible with EUV dimensions, leveraging A-b-(B-r-C) architectures. We also discuss progress in chemical pre-pattern fabrication using both positive- and negative tone resists, along with processing strategies to minimize defects and roughness based on BCP thermodynamics and assembly kinetics. We further examine metrology platforms for characterizing the thermodynamics of BCP materials and quantifying the size and shape of BCP domains. Lastly, we review pattern transfer strategies for generating functional inorganic masks suitable for semiconductor manufacturing. Together, these advances highlight the potential of DSA to complement EUV lithography, offering a pathway to address critical challenges in achieving high-precision patterning for the semiconductor industry.

Lee, Kyunghyeon [Univ. of Chicago, IL (United Stat↗
DOE OSTI2026

Self-driving thin film laboratory: autonomous epitaxial atomic-layer synthesis via real-time computer vision analysis of electron diffraction

Emerging materials science platforms with the ability to make autonomous decisions on the fly are fundamentally changing the outlook and protocols for materials optimization and discovery. Because AI-driven self-navigating schemes can effectively reduce the total number of iterations needed to arrive at the "answer" (i.e. the best stochiometric composition for a desired physical property, optimum materials processing parameters, etc.) by significant margins, they have the potential to revolutionize materials and chemical manufacturing processes at large in research laboratory settings as well as in industrial plants. Here, we demonstrate a successful implementation of real-time closed-loop autonomous navigation of a multi-dimensional materials synthesis parameter space for fabricating phase-pure epitaxial films of a metastable phase of a functional oxide in a combinatorial pulsed laser deposition chamber. Sequential epitaxial growth iterations in search of the optimized recipe to stabilize the desired crystal phase were performed using frame-by-frame quantitative computer vision analysis of reflection high-energy electron diffraction (RHEED) images of the unit-cell level film being deposited. The autonomous scheme regularly resulted in > 30-fold reduction in the number of required experiments compared to a comprehensive mapping of the parameter space. The real-time workflow developed here can be readily extended to a variety of thin film synthesis platforms opening the door for self-driving atomic-level materials design as well as autonomous optimization of semiconductor manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Anisotropic etching is a widely used process in semiconductor manufacturing, in particular, for micro- and nanoscale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic ions to remove materials in the vertical direction, creating anisotropic etch profiles. Plasmaless anisotropic etching, considered here, is a less common process that does not use ions and plasma. The anisotropy is caused by the unequal etching rates of different crystal planes; the etching process, thus, proceeds in a preferred direction. In this paper, we have performed quantum chemistry modeling of gas-surface reactions involved in the etching of silicon surfaces by molecular fluorine. The results confirm that orientation-dependent etch rates are the reason for anisotropy. The modeling of F 2 dissociative chemisorption on F-terminated silicon surfaces shows that Si–Si bond breaking is slow for the Si(111) surface, while it is fast for Si(100) and Si(110) surfaces. Both Si(100) and Si(110) surfaces incorporate a larger number of fluorine atoms resulting in Si–Si bonds having a larger amount of positive charge, which lowers the reaction barrier of F 2 dissociative chemisorption, yielding a higher etch rate for Si(100) and Si(110) surfaces compared to Si(111) surfaces. Molecular dynamics modeling of the same reactions has shown that the chosen reactive bond order potential does not accurately reproduce the lower reaction barriers for F 2 dissociative chemisorption on Si(100) and Si(100) surfaces. Furthermore, reparameterization is necessary to model the anisotropic etching process that occurs at lower temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Fluorinated ionic liquids as gas chromatographic stationary phases for the separation of volatile per- and polyfluoroalkyl substances

Background Here, the production of fluorinated organic compounds in the manufacturing, semiconductor, and pharmaceutical industries has increased exponentially over the past decade. This rapid growth has created an urgent need for efficient chromatographic platforms capable of selectively separating these compounds from complex mixtures, not only to support industrial quality control and waste management practices, but also to enable reliable environmental monitoring of volatile fluorinated contaminants. Conventional GC stationary phases lack the fluorophilic interactions needed for highly fluorinated analytes. Consequently, there is a clear demand for specialized stationary phases designed to improve chromatographic retention and selectivity for these compounds. Results Three stationary phases composed of fluorinated ionic liquids (ILs) with varied extent of fluorination were prepared to study fluorophilic interactions with fluorinated/non-fluorinated probe molecules by gas chromatography (GC). IL stationary phases featuring linear and branched perfluoroalkyl moieties, as well as a branched alkyl moiety, were systematically investigated. Chromatographic performance was examined using fluorinated compounds and their hydrocarbon analogs, including CF 3 -substituted aromatics, aliphatic alcohols, fluorotelomer alcohols (FTOHs), and perfluoroalkenes. Measurements on 5 m and 20 m columns revealed that the IL possessing branched alkyl provided stronger dispersive and hydrogen bonding interactions toward non-fluorinated aromatic and long-chain alcohols, whereas the fluorinated ILs enhanced retention of highly fluorinated FTOHs and perfluorodecene. Comprehensive two-dimensional GC (GC × GC), using a nonpolar primary column coupled with secondary columns featuring cross-bonded poly(trifluoropropylmethyl siloxane) (Rtx-200 ms), the branched fluorinated IL, or the branched non-fluorinated IL, highlighted complementary selectivity with the branched fluorinated IL providing the strongest interactions with fluorinated analytes. Significance These results demonstrate that fluorinated IL stationary phases are promising alternatives to conventional polysiloxane stationary phases for improving the separation of per- and polyfluoroalkyl substances and related fluorinated compounds. By correlating IL structure with fluorophilic interactions, this work establishes design principles for GC stationary phases that enable enhanced selectivity for highly fluorinated analytes while maintaining complementary interactions with non-fluorinated compounds.

Comprehensive two-dimensional GC↗
DOE OSTI2024

Indistinguishable photons from an artificial atom in silicon photonics

Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Valley splitting correlations across a silicon quantum well containing germanium

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array, formed in a Si 0.972 Ge 0.028 quantum well, manufactured by Intel. We observe correlations in valley splitting, at both sub-100 nm (single gate) and > 1 μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design.

Marcks, Jonathan C. [Argonne National Laboratory (↗
DOE OSTI2025

Schrödinger cat states of a nuclear spin qudit in silicon

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realize ‘Schrödinger cat’ states, which are superpositions of widely displaced coherent states that can be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, which are finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here, in this study, we demonstrate the creation and manipulation of Schrödinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and we constitute logical Pauli operations for qubits encoded in the Schrödinger cat states. Our work demonstrates the ability to prepare and control non-classical resource states, which is a prerequisite for applications in quantum information processing and quantum error correction, using our scalable, manufacturable semiconductor platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Rippled metamaterials with scale-dependent tailorable elasticity

Thermally induced ripples are intrinsic features of nanometer-thick films, atomically thin materials, and cell membranes, significantly affecting their elastic properties. Despite decades of theoretical studies on the mechanics of suspended thermalized sheets, controversy still exists over the impact of these ripples, with conflicting predictions about whether elasticity is scale-dependent or scale-independent. Experimental progress has been hindered so far by the inability to have a platform capable of fully isolating and characterizing the effects of ripples. This knowledge gap limits the fundamental understanding of thin materials and their practical applications. Here, we show that thermal-like static ripples shape thin films into a class of metamaterials with scale-dependent, customizable elasticity. Utilizing a scalable semiconductor manufacturing process, we engineered nanometer-thick films with precisely controlled frozen random ripples, resembling snapshots of thermally fluctuating membranes. Resonant frequency measurements of rippled cantilevers reveal that random ripples effectively renormalize and enhance the average bending rigidity and sample-to-sample variations in a scale-dependent manner, consistent with recent theoretical estimations. The predictive power of the theoretical model, combined with the scalability of the fabrication process, was further exploited to create kirigami architectures with tailored bending rigidity and mechanical metamaterials with delayed buckling instability.

Applied Physical Sciences↗
DOE OSTI2024

Controlling the charge of dust particles in an afterglow by modulating the plasma power

Abstract A dust particle immersed in a glow-discharge plasma has long been known to have a charge that is negative , while the plasma is powered. However, in the afterglow, following the stopping of the plasma power, a large positive charge can collect on the particle, as was shown recently for particles in a cathodic sheath. While that outcome of positive charging in the afterglow may be common, an experimental discovery reported here reveals that the opposite outcome is also possible: a particle can develop a negative charge in the afterglow, if the plasma had previously been operated with a modulated power. Before stopping the plasma power off altogether, in a run with power modulated at a low duty cycle of 4.5 % , the particle’s residual charge was negative, but it was positive in a control run without modulation. This result points to a way of controlling the charge of dust particles in a decaying plasma, which can be useful for mitigating defects in semiconductor manufacturing.

Physics↗
DOE OSTI2023

Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis

Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics stems from piracy of intellectual properties (IP) and counterfeiting, which causes significant revenue loss to the semiconductor manufacturers. Further, these components often lead to compromised functionality, reliability, security, and safety of an electronic system. This paper presents secure information transmission and probing methods for verifying the integrity of digital integrated circuit (ICs) based on their electromagnetic (EM) near-field emissions and thereby protecting systems against counterfeit components. The proposed method has been tested on both high-level instructions executed by microprocessors or Systems-on-Chip (serving as examples of software), and also logic circuits within FPGA fabrics and ASICs (serving as examples of hardware). The authentication information required by each digital system is generated using a pseudo-random number generator circuit and securely transmitted via near-field magnetic emissions. The authorized party can probe these emissions using a near-field probe, process the acquired signals to improve the signal-to-noise ratio (SNR), and then recover the secure information through matched filtering. Experimental results from commercial SoCs are used to demonstrate the proposed technique. Methods for reducing EM interference during integrity verification of both FPGAs and ASICs are also described.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Characterization of latent image of electron beam resist via critical-dimension resonant soft X-ray scattering

Metrology plays a crucial role in semiconductor manufacturing by providing accurate and precise measurement and characterization of critical parameters. With the development of high-resolution extreme ultraviolet lithography (EUVL) processes, critical dimensions are shrinking to sub-10 nm. Resist materials encounter the challenge of providing heightened sensitivity and a handle on exacerbating stochastic variations. A comprehensive understanding of the chemical profile of the latent image is pivotal for mitigating stochastic effects and optimizing pattern quality. However, the subtle differences in chemistry between the exposed and unexposed regions of the resists make it extremely challenging to characterize the latent images with sub-nanometer precision. Here, we develop the metrology with critical-dimension resonant soft X-ray scattering (CD-RSoXS) to probe the chemical profiles of latent images stored in resist after exposure. The combination of absorption spectroscopy and enhanced scattering contrast makes it possible to characterize the subtle structural and chemical variations in the latent image. Moreover, the results of the measurements are compared with the simulations with a finite element method–based Maxwell solver to extract a detailed profile of the latent and developed images. We demonstrate that the CD-RSoXS technique can provide valuable insights into the high spatial resolution and local chemical sensitivity simultaneously, which is crucial to understanding the resolution limits and stochastic effects in EUVL processes.

36 MATERIALS SCIENCE↗