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DOE OSTI · 1524991

Method for simultaneous modification of multiple semiconductor device features

Shul, Randy J.·Sniegowski, Jeffry J.·Larson, Kurt W.·Zortman, William A.
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Abstract

Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned with a plurality of features of the semiconductor device that are desirably modified. Layers of the semiconductor device are etched based on the pattern to create a plurality of vias that each extend through one or more layers of the semiconductor device to a respective feature of the device. A conducting material is deposited into the vias to form a plurality of conducting plugs. Conducting material may be further deposited on the surface of the semiconductor device to connect plugs to one another and/or connect plugs to surface features of the device, thereby forming a plurality of new connections between features of the semiconductor device.

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BibTeXRIS

Shul, Randy J., Sniegowski, Jeffry J., Larson, Kurt W., Zortman, William A.. 2019-02-26. Method for simultaneous modification of multiple semiconductor device features. https://www.osti.gov/biblio/1524991

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