Low defect nuclear transmutation doping in nitride-based semiconductor materials
Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
Kwon, Jae Wan↗
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The processing of semiconductor materials
Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.
Source record↗
Photonuclear transmutation doping in gallium-based semiconductor materials
The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
Kwon, Jae Wan↗
Maxwell-Bloch Equations Modeling of Ultrashort Optical Pulse Propagation in Semiconductor Materials
An algorithm has been developed that solves the semiconductor Maxwell-Bloch equations, without making the standard slowly-varying envelope (SVEA) and rotating-wave (RWA) approximations. It is applied to study the propagation of ultrashort pulses in semiconductor materials. The results include many-body effects due to the Coulomb interaction among the charge carriers as well as the nonlinear effects resulting from spectral hole-burning.
Goorjian, Peter M.↗
Fundamental properties of semiconductor materials, and material performance in detectors
Procedures for determining fundamental properties of semiconductor materials, their performance as radiation detectors, and their service life as such detectors are given. Relationships were established between the minority carrier lifetime in the bulk of the material and the charge collection efficiency of the detector.
Casper, K. J.↗
Recombination-regeneration formula for hole- electron pairs in randomly doped semiconductor materials.
Recombination-regeneration formula for hole- electron pairs in randomly doped semiconductor materials
TIME DEPENDENCY↗
Methods for forming group III-V arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Methods for forming group III-arsenide-nitride semiconductor materials
Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
Major, Jo S.↗
Methods of Measurement for Semiconductor Materials, Process Control, and Devices
The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.
Bullis, W. M.↗
Bulk semiconductor materials for millimeter and submillimeter wave detection
Investigating electrical properties of bulk semiconductor materials for application as millimeter and submillimeter wave detectors
Eldumiati, I. I.↗
Methods of measurement for semiconductor materials, process control, and devices
The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.
Bullis, W. M.↗
Vacuum deposition of 3 - 5 semiconductor materials by the three-temperature deposition method
Vacuum deposition of indium antimonide semiconductor materials
Fanslow, G.↗
A study of the photocatalytic effects of aqueous suspensions of platinized semiconductor materials on the reaction rates of candidate redox reactions
The effectiveness of powdered semiconductor materials in photocatalyzing candidate redox reactions was investigated. The rate of the photocatalyzed oxidation of cyanide at platinized TiO2 was studied. The extent of the cyanide reaction was followed directly using an electroanalytical method (i.e. differential pulse polarography). Experiments were performed in natural or artificial light. A comparison was made of kinetic data obtained for photocatalysis at platinized powders with rate data for nonplatinized powders.
Miles, A. M.↗
Semiconductor material and method of making same Patent
Addition of group 3 elements to silicon semiconductor material for increased resistance to radiation damage in solar cells
Mandelkorn, J.↗
Methods of measurement for semiconductor materials, process control, and devices
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.
Bullis, W. M.↗
A survey of semiconductor materials and processes for thick-film field-effect transistor fabrication
Criteria applied to semiconductor materials and deposition processes for thick film, insulated gate field effect transistor fabrication
Chang, Y. F.↗
Methods of measurement for semiconductor materials, process control, and devices Quarterly report, 1 Apr. - 30 Jun. 1969
Measurement methods for semiconductor materials, devices, fabrication, processing
Bullis, W. M.↗
Methods of measurement for semiconductor materials, process control, and devices
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.
Bullis, W. M.↗