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Results for “semiconductor superlattices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Semiconductor superlattice photodetectors

A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

Chuang, S. L.↗
NASA NTRS1985

Semiconductor superlattice photodetectors

Two novel types of superlattice photodetectors were studied. The first was a superlattice photomultiplier and the second a photodetector based on the real space transfer mechanism. A summary of the results is presented.

Chuang, S. L.↗
NASA NTRS1986

Semiconductor superlattice photodetectors

During the past half-year, the research effort centered on further investigating both the new superlattice photomultiplier with tunneling-assisted impact ionization and the photodetector based on the real space transfer mechanism. A brief outline of the current status of these projects is presented. Detailed analyses are included in Appendices A and B. New results of the tunneling-assisted impact ionization are presented.

Chuang, S. L.↗
NASA NTRS1986

Semiconductor superlattice photodetectors

Technical progress made in the study of superlattice photoconductors is summarized and papers submitted for publication are listed. Since the quantum-well regions may contain several subbands, each of which may be occupied by electrons depending on the doping concentrations, it is important to include the multi-subbands in calculating the impact ionization rate. The electrons occupying the higher subbands require a smaller amount of energy to get out of the quantum well; thus, those higher level subband electrons contribute significantly to the impact ionization rate. The results of the subbands have been calculated. Results concerning the nonparabolicity effect of the band structure, the effect of the quantum-well size, and the effect of the band-edge discontinuity and doping are also summarized.

Chuang, S. L.↗
NASA NTRS1986

Semiconductor superlattice photodetectors

Superlattice photodetectors were investigated. A few major physical processes in the quantum-well heterostructures related to the photon detection and electron conduction mechanisms, the field effect on the wave functions and the energy levels of the electrons, and the optical absorption with and without the photon assistance were studied.

Chuang, S. L.↗
NASA NTRS1998

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Fathauer, Robert W.↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1984

Subbarrier absorption in a stationary superlattice

The calculation of the interband absorption coefficient was carried out in the classical case, when the frequency of light was assumed to bind two miniband subbarrier states of different bands. The influence of two dimensional Mott excitons on this absorption was studied and a comparison was made with the experiment. All of these considerations were done taking into account the photon wave vector (the phase spatial heterogeneity). The basic traits of the energy spectra of superlattice semiconductors, their kinetic and optical properties, and possible means of electromagnetic wave intensification were examined. By the density matrix method, a theory of electrical and electromagnetic properties of superlattices was suggested.

Arutyunyan, G. M.↗
NASA NTRS1983

Solitons in semiconductors with a superlattice

The nonlinear parabolic equation describing the propagation of the electromagnetic wave in a semiconductor with the superlattice is analyzed. The possibility of the existence of the solitary waves is proved both for a small amplitude of the electrical field and the latter moderate values.

Tetervov, A. P.↗
NASA NTRS1986

Exploiting the Vacuum of Space

Molecular-beam epitaxy and other processes tested with minimal contamination. Vacuum experimental facility for outer space creates vacuums higher than those available in terrestrial vacuum chambers. Facility minimizes contamination of work from walls and allows rapid removal of gases and heat generated by experimental processes. Used for processes such as molecular-beam epitaxy (growing semiconductor superlattices), metal/organic chemical vapor deposition, coating mirrors and other optical components, and ultrapurification.

Naumann, R. J.↗
NASA NTRS2005

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗
NASA NTRS2009

Phase Locking of a 2.7 THz Quantum Cascade Laser to a Microwave Reference

We demonstrate the phase locking of a 2.7 THz metal-metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain (x 12) from a microwave synthesizer at approx. 15 GHz. Both laser and reference radiations are coupled into a bolometer mixer, resulting in a beat signal, which is fed into a phase-lock loop. The spectral analysis of the beat signal confirms that the QCL is phase locked. This result opens the possibility to extend heterodyne interferometers into the far-infrared range.

Khosropanah, P.↗
NASA NTRS1992

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys and superlattices

This proposal was mainly concerned with the theoretical study of semiconductor compounds, alloys, and superlattices of interest for photovoltaic applications. In the last year (1991) a study was devoted to metal/graphite bonding in relation to use of graphite fiber reinforcement of Cu for high thermal conductivity applications. The main research topics addressed during the full period of the grant are briefly described: studies of the In-Ga-As ternary system; band-offsets at common anion and InAs/GaSb/AlSb heterojunctions; alloy theory (cluster variation method); and Cu/graphite bonding. Most of the work was described more extensively in previous yearly reports and renewal applications and in publications. The last topic is described more fully in a separate report attached. A list of publications resulting directly from this grant or from other grants but related to this work and of conference presentations is given at the end.

Lambrecht, Walter R. L.↗
NASA NTRS1992

Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys, and superlattices: Theoretical study of Cu/graphite bonding

The goals of the research were to provide a fundamental science basis for why the bonding of Cu to graphite is weak, to critically evaluate the previous analysis of the wetting studies with particular regard to the values used for the surface energies of Cu and graphite, and to make recommendations for future experiments or other studies which could advance the understanding and solution of this technological problem. First principles electronic structure calculations were used to study the problem. These are based on density functional theory in the local density approximation and the use of the linear muffin-tin orbital band structure method. Calculations were performed for graphite monolayers, single crystal graphite with the hexagonal AB stacking, bulk Cu, Cu(111) surface, and Cu/graphite superlattices. The study is limited to the basal plane of graphite because this is the graphite plane exposed to Cu and graphite surface energies and combined with the measured contact angles to evaluate the experimental adhesion energy.

Lambrecht, Walter R. L.↗
NASA NTRS2005

Passivation of MBE grown InGaSb/InAs superlattice photodiodes

We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

molecular beam↗