On the epitaxial growth of single-crystal metal films free of impurities.
Epitaxial growth of single crystal, impurity free metal films using clean alkali halide surfaces in ultrahigh vacuum
ULTRAHIGH VACUUM↗
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Growth of single-crystal gallium nitride
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.
Clough, R.↗
Floating substrate process: Large-area silicon sheet task low-cost solar array project
Supercooling of silicon-tin alloy melts was studied. Values as high as 78 C at 1100 C and 39 C at 1200 C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050 C and 1150 C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200 C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters.
Garfinkel, M.↗
High-efficiency thin-film GaAs solar cells
GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.
Stirn, R. J.↗
Investigation of single-crystal ferrite thin film
Growth and characterization of single crystal thin films of lithium ferrite
Besser, P. J.↗
Investigation of single-crystal ferrite thin film
Chemical vapor deposition growth of epitaxial single crystal lithium ferrite thin films
Kolb, L.↗
The growth of single crystal films free of impurities
Growth of high purity single-crystal gold films on sodium chloride and potassium chloride substrates by vacuum deposition
THIN FILM↗
Edge-defined film-fed growth of beta-alumina and Mg-substituted beta-alumina
High Na vapor pressure, peritectic decomposition, and high reactivity of the melt complicate the growth of beta-alumina crystals. These difficulties were overcome by using a high-pressure (300 psig) growth chamber, Na2O-rich melts, and Ir for all surfaces in contact with the melt. These procedures were combined with the edge-defined film-fed growth technique to produce single-crystal beta-alumina tubes and ribbons.
Morrison, A. D.↗
In situ oxygen conditioning of /001/ MgO thin film substrates for film growth studies by electron microscopy
It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.
Moorhead, R. D.↗
Summary of in situ epitaxial nucleation and growth measurements
In situ nucleation and growth measurements of Ag and Au on single-crystal PbSe thin films were made using a transmission electron microscope. Properties studied were polymorphism, crystalline perfection, and the stoichiometric composition of the initial and the autoepitaxially thickened PbSe substrates. The quantitative nucleation and cluster growth measurements were limited to low-saturation conditions. The epitaxial orientations are discussed, and evidence is presented as to the stage of deposition at which the epitaxial order for Ag is introduced. Strong substrate/overgrowth interaction manifested itself by alloying and interdiffusion.
Poppa, H.↗
Evaluation of silicon ribbon material for solar cell fabrication
Optical microscopy, electron microscopy, and X-ray diffraction were utilized to characterize silicon ribbon structure. Complex twin formation was observed in nearly all ribbons examined. Twins formed in the 110-plane 112-line ribbon orientation appear stable, and this orientation may be preferable when the ribbon is utilized for solar cells. In addition to twinning, grain boundaries and other structural defects were observed in the ribbon material. Hall effect, resistivity, spreading resistance, surface photovoltage, and solar cell electrical/optical measurements were performed on ribbon samples and correlated with structural and ribbon growth characteristics. Only those ribbon samples with either single-crystal structure or with 'parallel' twin formations were capable of solar-cell performance approaching that of Czochralski material.
Leipold, M.↗
Epitaxial thin film GaAs solar cells using OM-CVD techniques
A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.
Stirn, R. J.↗
Single-crystal semiconductor films grown on foreign substrates
Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Vohl, P.↗
The adsorption and early stages of condensation of Ag and Au on W single-crystal surfaces
Silver and gold were evaporated up to several monolayers in thickness onto W single-crystal surfaces of the 110 and 100 plane types in the temperature range between 300 and 1300 K. The mode of growth and the structure of the layers were studied by Auger electron spectroscopy and low-energy electron diffraction. The results are compared with thermal desorption spectroscopy data and work-function change measurements. They show certain similarities but also some striking differences between the two systems Ag/W and Au/W as well as a strong crystallographic anisotropy of adsorption and condensation.
Bauer, E.↗
High efficiency thin-film GaAs solar cells
The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology
Zwerdling, S.↗
Interaction of metal layers with polycrystalline Si
Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.
Nakamura, K.↗
Study of growth of single crystal ribbon in space
The technical feasibility is studied of growing single-crystal silicon ribbon in the space environment. Procedures are described for calculating the electromagnetic fields produced in a silicon ribbon by an rf shaping coil. The forces on the ribbon and the degree of shaping to be expected are determined. The expected steady-state temperature distribution in the ribbon is calculated in the one-dimensional approximation. Calculations on simplified models indicate, that lack of flatness of the shaped ribbon and excessive heating of the melt by the eddy currents induced by the shaping fields may pose problems. An analysis of the relative effects of various kinds of forces other than electromagnetic showed that in the space environment capillarity forces would dominate, and that the shape of the melt is thus principally determined by the shape of any solids with which it comes in contact. This suggests that ribbon may be produced simply by drawing between parallel wires. A concept is developed for a process of off-angle growth, in which the ribbon is pulled at an angle to the solidification front. Such a process promises to offer increased growth rate, better homogeneity, and thinner ribbon.
Wood, V. E.↗
Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope
Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.
Heinemann, K.↗