MEASUREMENT OF THE PROPERTIES OF LASER CRYSTALS AT SUBMILLIMETER WAVELENGTHS
Laser crystals at submillimeter wavelengths - optical properties
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Laser crystals at submillimeter wavelengths - optical properties
Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.
Our universe is most luminous at far-infrared and submillimeter wavelengths (100 GHz - 10 THz) after the Cosmic Microwave Background (CMB) radiation. This region of the electromagnetic spectrum provides critical tracers for the study of a wide range of astrophysical and planetary phenomena. This spectral range contains information on the origin of the planets, stars, galaxies, and clusters; the geometry and matter/energy content of the Universe, atmospheric constituents and dynamics of the planets and comets and tracers for global monitoring and the ultimate health of the Earth. Sensors at far-infrared and submillimeter wavelengths provide unprecedented sensitivity for astrophysical, planetary, and earth observing instruments. Very often, for a spaced based platform where the instruments are not limited by atmospheric losses and absorption, the overall instrument sensitivity is dictated by the sensitivity of the sensors themselves. Moreover, some of the cryogenic sensors at submillimeter wavelengths provide almost quantum-limited sensitivity. This paper provides an overview of the submillimeter-wave sensors and their performance and capabilities for space applications.
The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.
Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.
The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.
We report on the first mixing experiments at submillimeter wavelengths with superconducting diffusion-cooled hot-electron bolometers (HEB's) made from aluminum.
Observations of submillimeter wavelength solar radiation
It is pointed out that the region of the spectrum from 300 to 3000 GHz (100 to 1000 microns), which is referred to as the submillimeter, is one of the least explored areas in the electromagnetic spectrum. The reasons for this situation are related to a lack of adequate instrumentation for detecting the radiation and an almost complete absorption of the radiation by the earth's atmosphere. The vast majority of the rotational transitions of molecules occur in the millimeter and submillimeter wavelength region of the spectrum. The strength of the lines increases at higher frequencies until a condition is reached in which the energy levels are no longer populated. The study of molecular clouds at submillimeter wavelengths promises to provide new important results. Attention is given to the design of suitable submillimeter receivers, problems of atmospheric transmission, and galactic molecular lines.
Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.
High accuracy nonspherical reflectors fabricated for millimeter and submillimeter wavelength region
Nonreciprocal devices using solid state magnetoplasmas at millimeter and submillimeter wavelengths
Differential two-beam scans of the sun in submillimeter wavelengths (350 microns to 1 millimeter) indicate limb brightening approaching 1 percent when the cosine of the angle from the normal equals 0.60. The observations also show considerable chromospheric structure, both in active and quiet regions, but with less relative amplitude than at millimeter and centimeter wavelengths. The limited angular resolution of the observing system, together with photometric errors due to fluctuating atmospheric transparency, make the brightness profile of the extreme limb uncertain. The observed degree of limb brightening is considerably less than that consistent with spherically symmetric model atmospheres based on continuum brightness-temperature measurements. The suppression of limb brightening suggests the existence of irregular granular structure with both horizontal and vertical characteristic sizes of the order of 1500 km. High-resolution images in the wings of the K-line show granular structure of about this horizontal scale.
Receiver techniques and detectors for use at millimeter and submillimeter wavelengths in radio astronomy
The authors report on the design, analysis and performance of an all GaAs MMIC multiplier for use at submillimeter wavelengths.
Far infrared and submillimeter surveys offer unique information on the early stages of galaxy formation and evolution, and the cosmic history of star formation and metal enrichment. This paper presents various model results that can be used in the interpretation of far-IR and submm surveys with different diameter telescopes.
Two ferroelectric bolometer sensing elements measure low rf absolute power at millimeter and submillimeter wavelengths. The sensing elements are mounted in sections of waveguide and connected in series in a standard temperature compensating bridge circuit.
The development of GaAs Schottky barrier diodes for frequencies well into the submillimeter wavelength range is discussed. These devices have the highest cutoff frequencies yet obtained for varactor diodes and have produced sufficient output power to drive Schottky mixers at frequencies as high as 640 GHz. The fundamental design tradeoff between cutoff frequency and capacitance modulation is explored. As the doping density is increased and the anode diameter is reduced, the dynamic cutoff frequency increases, reaching a maximum of roughly 5 THz. It is concluded that the maximum output frequency from harmonic multipliers based on standard GaAs varactor diodes will be about 1 THz.