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It is expected that thin-film superconductors can be used as detectors or sources of infrared and microwave radiation, as magnetometers, as voltage standards, and for voltage and current measurements, for electronic signal processing, and in digital circuitry.
This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.
We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.
We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.
We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.
We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.
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Superconducting electronics offers a variety of remarkable properties including high speed and low dissipation. The paper discusses fundamental considerations which appear to suggest that superconducting (cryogenic) technology will offer significant advantages for future digital devices. It shows how the active element in superconducting electronics, the Josephson junction, works and discusses the technology for fabricating the devices. The characteristics of published circuits are briefly reviewed, and the capabilities of future superconducting computers and instruments are projected.
A technique for making superconducting joints between wires made of dissimilar superconducting metals has been devised. The technique is especially suitable for fabrication of superconducting circuits needed to support persistent electric currents in electromagnets in diverse cryogenic applications. Examples of such electromagnets include those in nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI) systems and in superconducting quantum interference devices (SQUIDs). Sometimes, it is desirable to fabricate different parts of a persistent-current-supporting superconducting loop from different metals. For example, a sensory coil in a SQUID might be made of Pb, a Pb/Sn alloy, or a Cu wire plated with Pb/Sn, while the connections to the sensory coil might be made via Nb or Nb/Ti wires. Conventional wire-bonding techniques, including resistance spot welding and pressed contact, are not workable because of large differences between the hardnesses and melting temperatures of the different metals. The present technique is not subject to this limitation. The present technique involves the use (1) of a cheap, miniature, easy-to-operate, capacitor-discharging welding apparatus that has an Nb or Nb/Ti tip and operates with a continuous local flow of gaseous helium and (2) preparation of a joint in a special spark-discharge welding geometry. In a typical application, a piece of Nb foil about 25 m thick is rolled to form a tube, into which is inserted a wire that one seeks to weld to the tube (see figure). The tube can be slightly crimped for mechanical stability. Then a spark weld is made by use of the aforementioned apparatus with energy and time settings chosen to melt a small section of the niobium foil. The energy setting corresponds to the setting of a voltage to which the capacitor is charged. In an experiment, the technique was used to weld an Nb foil to a copper wire coated with a Pb/Sn soft solder, which is superconducting. The joint was evaluated as part of a persistent-current circuit having an inductance of 1 mH. A current was induced in a loop, and no attenuation of the current after a time interval 1,000 s was discernible in a measurement having a fractional accuracy of 10(exp -4): This observation supports the conclusion that the weld had an electrical resistance <10(exp -10) omega.
An improvement in the design and fabrication of sensing coils of superconducting quantum interference device (SQUID) magnetometers has been proposed to increase sensitivity. It has been estimated that, in some cases, it would be possible to increase sensitivity by about half or to reduce measurement time correspondingly. The pertinent aspects of the problems of design and fabrication can be summarized as follows: In general, to increase the sensitivity of a SQUID magnetometer, it is necessary to maximize the magnetic flux enclosed by the sensing coil while minimizing the self-inductance of this coil. It is often beneficial to fabricate the coil from a thicker wire to reduce its self-inductance. Moreover, to optimize the design of the coil with respect to sensitivity, it may be necessary to shape the wire to other than a commonly available circular or square cross-section. On the other hand, it is not practical to use thicker superconducting wire for the entire superconducting circuit, especially if the design of a specific device requires a persistent-current loop enclosing a remotely placed SQUID sensor. It may be possible to bond a thicker sensing-coil wire to thinner superconducting wires leading to a SQUID sensor, but it could be difficult to ensure reliable superconducting connections, especially if the bonded wires are made of different materials. The main idea is to mold the sensing coil in place, to more nearly optimum cross sectional shape, instead of making the coil by winding standard pre-fabricated wire. For this purpose, a thin superconducting wire loop that is an essential part of the SQUID magnetometer would be encapsulated in a form that would serve as a mold. A low-melting-temperature superconducting metal (e.g., indium, tin, or a lead/tin alloy) would be melted into the form, which would be sized and shaped to impart the required cross section to the coil thus formed.
Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.
Hybrid microelectronics containing both conventional electronic components and high-temperature superconductive films have been designed, fabricated, and tested. The devices operate from room temperature to 75K and perform d.c. four-probe resistance measurements on six superconductive specimens resident on each circuit. Four of these hybrid circuits were incorporated into the Materials In Devices As Superconductors (MIDAS) spaceflight experiment and evaluated over a 90-day period on the Mir space station. Prior to launch, comprehensive testing of the flight circuits was performed to determine the effects of thermal cycling, vibration loads, and long-term operation on circuit performance. This report describes the fabrication and assembly procedures used to produce the hybrid circuits, the techniques used to integrate the circuits into the MIDAS hardware system, and the results of pre-flight evaluations which verified circuit functionality.
A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
Material degradation during the fabrication of microelectronic devices has plagued the space industry for many years owing to the layering of many dissimilar metals to create these devices. Often, commonly used materials and systems are overlooked as potential sources of material degradation. This technical bulletin highlights extensive research to isolate probable causes of this degradation.
The National Renewable Energy Laboratory (NREL) has extensive capabilities for fabricating a variety of high-technology films. Much of the in-house work in NREL's large photovoltaics (PV) program involves the fabrication of multiple thin-film semiconducting layers constituting a thin-film PV device. NREL's smaller program in superconductivity focuses on the fabrication of superconducting films on long, flexible tape substrates. This paper focuses on four of NREL's in-house research groups and their film fabrication techniques, developed for a variety of elements, alloys, and compounds to be deposited on a variety of substrates. As is the case for many national laboratories, NREL's technology transfer efforts are focusing on Cooperative Research and Development Agreements (CRADA's) between NREL researchers and private industry researchers.
A document proposes the development of hot-electron photon counters (HEPCs) for detecting terahertz photons in spaceborne far-infrared astronomical instruments. These would be superconducting- transition-edge devices: they would contain superconducting bridges that would have such low heat capacities that single terahertz photons would cause transient increases in their electron temperatures through the superconducting- transition range, thereby yielding measurable increases in electrical resistance. Single devices or imaging arrays of the devices would be fabricated as submicron-sized bridges made from films of disordered Ti (which has a superconducting- transition temperature of .0.35 K) between Nb contacts on bulk silicon or sapphire substrates. In operation, these devices would be cooled to a temperature of .0.3 K. The proposed devices would cost less to fabricate and operate, relative to integrating bolometers of equal sensitivity, which must be operated at a temperature of approx. = 0.1 K.
The millimeter and the submillimeter wavelengths of the electromagnetic spectrum hold a wealth of information about the evolution of the universe. In particular, cosmic microwave background (CMB) radiation and its polarization carry the oldest information in the universe, and provide the best test of the inflationary paradigm available to astronomy today. Detecting gravity waves through their imprint on the CMB polarization would have extraordinary repercussions for cosmology and physics. A transition-edge hot-electron micro - bolometer (THM) consists of a superconducting bilayer transition-edge sensor (TES) with a thin-film absorber. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM em ploys the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. The devices are fabricated photolithographically and are easily integrated with antennas via microstrip transmission lines, and with SQUID (superconducting quantum interference device) readouts. The small volume of the absorber and TES produces a short thermal time constant that facilitates rapid sky scanning. The THM consists of a thin-film metal absorber overlapping a superconducting TES. The absorber forms the termination of a superconducting microstripline that carries RF power from an antenna. The purpose of forming a separate absorber and TES is to allow flexibility in the optimization of the two components. In particular, the absorbing film's impedance can be chosen to match the antenna, while the TES impedance can be chosen to match to the readout SQUID amplifier. This scheme combines the advantages of the TES with the advantages of planar millimeter-wave transmission line circuits. Antenna-coupling to the detectors via planar transmission lines allows the detector dimensions to be much smaller than a wavelength, so the technique can be extended across the entire microwave, millimeter, and submillimeter wavelength ranges. The circuits are fabricated using standard microlithographic techniques and are compatible with uniform, large array formats. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM employs the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. There is no fragile membrane in the structure for thermal isolation, which improves the fabrication yield.
Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist of high-temperature superconductor YBa(2)Cu(3)O(7-delta), normal conductor Au, and conventional superconductor Nb, fabricated in sandwich geometry. Devices and processes by which fabricated are part of continuing effort to develop SNS microbridges for use in superconducting quantum interference devices (SQUIDS's) or as mixers or local oscillators operating at frequencies of hundreds of gigahertz. Results show promise for manufacture of practical devices.