Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment
We compare the failure mechanism and performance of a silicon carbide (SiC) semi-superjunction (semi-SJ) power DMOSFET against pure SJ and conventional DMOSFET when struck by a single heavy ion. The Single-Event Burnout (SEB) failure mechanism was identified as the thermal runaway from second breakdown resulting in mesoplasma formation. The semi-SJ design shifts the mesoplasma location from the drift/substrate interface seen in the control device structures to a location along the center of the P-pillar and closer towards the DMOSFET surface, thus significantly improving the SEB threshold voltage. The SEB threshold voltage varies with pillar width and ratio of pillar thickness to drift layer thickness. A maximum value of SEB threshold voltage is reached when the pillar to drift layer ratio is 0.9 and the pillar width is 2.4 μm. The semi-SJ SEB/breakdown voltage ratio is 100% and 13% higher than the pure SJ and conventional DMOSFET, respectively. Using a new figure of merit (FOM), which accounts for the tradeoff between SEB threshold voltage and on-state performance, we find that the SiC semi-SJ DMOSFET achieves a FOM that is 1.8 and 8 times higher than SJ and conventional DMOSFET, respectively, making the semi-SJ a competitive candidate for radiation hardened applications.