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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Thin-Film Solar Cells on Polymer Substrates for Space Power

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. Solar cells based on thin-film materials offer the promise of much higher MSP and much lower cost. However, for many space applications, a 20% or greater AM0 efficiency (eta) may be required. The leading thin-film materials, amorphous Si, CuInSe, and CdTe have seen significant advances in efficiency over the last decade but will not achieve the required efficiency in the near future. Several new technologies are herein described to maximize both device eta and MSP. We will discuss these technologies in the context of space exploration and commercialization. One novel approach involves the use of very lightweight polyimide substrates. We describe efforts to enable this advance including materials processing and device fabrication and characterization. Another approach involves stacking two cells on top of each other. These tandem devices more effectively utilize solar radiation by passing through non-absorbed longer wavelength light to a narrow-bandgap bottom cell material. Modeling of current devices in tandem format indicates that AM0 efficiencies near 20% can be achieved with potential for 25% in the near future. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Recent advances will be stressed.

Hepps, A. F.↗
NASA NTRS2004

Buffer Layer Effects on Tandem InGaAs TPV Devices

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Wilt, David M.↗
NASA NTRS2002

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Hepp, Aloysius F.↗
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
NASA NTRS1987

Use of LEBU-devices for drag reduction at flight conditions

The practical aspects of drag reduction using LEBU (large-eddy break-up) devices, turbulence manipulators, etc. in flight are discussed with the help of experience from previous flight tests. These tests have shown that appreciable reductions in local skin friction exist under flight conditions, and that the turbulence-manipulating effects can be found for swept tandem devices in transonic as well as supersonic flows. The unsteady loads experienced with the devices are discussed in connection with the frequencies occurring in this type of real flight conditions.

Bertelrud, A.↗
NASA NTRS1979

A device model for the tandem junction solar cell

A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.

Matzen, W. T.↗
NASA NTRS2010

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.

Prasad, Narashimha S.↗
NASA NTRS1990

The propagation of RF wave in a tandem mirror plasma propulsion device

The propagation of RF waves launched in the end and the central cell of the tandem mirror propulsion device has been investigated both theoretically and experimentally. It was found that the amplitude of the wave excited in the plasma peaked while approaching the resonance, but then damped out, indicating strong absorption of the wave by the plasma. The absorption took place near the axis and the midplane of the device. The experimental results confirmed the theoretical prediction of the resonance effect. A very important discovery of this experiment was the broadening of the ICRF Fourier spectrum in the presence of the plasma.

Yang, T. F.↗
NASA NTRS1991

Experiment and numerical simulation of RF heating in the Tandem Mirror plasma propulsion device

Recent results of experimental and theoretical studies of ICRF heating of the plasma in the Tendem Mirror rocket are presented. The radial and axial profile of the magnetic field of the wave have been measured, and the data agree with the results from numerical simulation. One very important new finding is that the wave damped when it approached the resonance plane. This is a strong indication of beach heating effect and that RF power is absorbed by the ions in the plasma as expected. This power absorption phenomenon was also further confirmed by the refined analytical study of the wave propagation in a slab model. The electron density in the central cell has been measured by a microwave interferometer. The existence of two types of discharge similar to those of H-alpha emission have also been observed from the density measurements. A preliminary design of a flight system for a 100-day Mars transit has been undertaken. The specific weight for a 10 MW rocket is only 0.04 kg/kW.

Yang, T. F.↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS2005

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗
NASA NTRS1985

A tandem mirror plasma source for hybrid plume plasma studies

A tandem mirror device to be considered as a hot plasma source for the hybrid plume rocket concept is discussed. The hot plamsa from this device is injected into an exhaust duct, which will interact with an annular hypersonic layer of neutral gas. The device can be used to study the dynamics of the hybrid plume, and to verify the numerical predictions obtained with computer codes. The basic system design is also geared towards low weight and compactness, and high power density at the exhaust. The basic structure of the device consists of four major subsystems: (1) an electric power supply; (2) a low temperature, high density plasma gun, such as a stream gun, an MPD source or gas cell; (3) a power booster in the form of a tandem mirror machine; and (4) an exhaust nozzle arrangement. The configuration of the tandem mirror section is shown.

Yang, T. F.↗
NASA NTRS1984

Parametric instabilities during electron cyclotron heating of tandem mirrors

Electron cyclotron resonance heating is one of the most commonly used methods of heating electrons in the plugs and in the thermal barriers of tandem mirrors. The intense coherent electromagnetic waves used for such heating are susceptible to parametric decay into other modes. Significant growth rates are found for the decay of either ordinary or extraordinary waves into two magnetized electron plasma waves. This and related effects may result in electron heating mechanisms rather different than those assumed in linear ray-tracing calculations. These results may help explain the unusual effects observed during heating of the Phaedrus tandem mirror device. In the general case, these instabilities may be strongly inhibited by density gradients.

Nicholson, D. R.↗
NASA NTRS1984

Electron-cyclotron maser radiation from a relativistic loss-cone distribution

A relativistic analysis of the electron-cyclotron maser instability in a loss-cone distribution is presented, extending the treatment of Lau and Chu (1983) to include the effects of finite k-perpendicular (as encountered in laboratory tandem-mirror devices with mean energies in excess of 50 keV). The results are presented in graphs, and it is found that the k-perpendicular effects are significant, so that emission perpendicular to the magnetic field is associated with most rapid growth of the instability. The persistence of the instability when the ratio of the plasma frequency to the electron-cyclotron frequency is less than 0.1 is demonstrated, and the factors which need to be accounted for in applying the results to actual mirror devices are indicated.

Pritchett, P. L.↗
NASA NTRS1986

Solar cell reliability testing

The progress and initial data on accelerated stress tests on small amorphous silicon test samples from several manufacturers are reported. The test samples include both single and tandem junction devices.

Lathrop, J.↗
NASA NTRS1997

On the Development of a Magnetically Vectored Variable ISP Plasma Rocket

The development of a Magnetically Vectored Variable I(sub sp) Plasma Rocket at the Advanced Space Propulsion Laboratory (ASPL) is in progress at NASA's Johnson Space Center. The facility is using a small, 3.2 m tandem mirror device to study the application of RF heated magnetically contained plasmas for space propulsion. The central cell radius is 0.1 m and fields of 0.2 T and 2 T are possible in the central and end-cell mirror sections, respectively. A magnetoplasmadynamic (MPD) injector has just been acquired and will be used along with other methods of plasma refueling. A 1 MW magnet power supply upgrade is being developed with full implementation by the Spring of 1997. Two microwave systems for discharge initiation and plasma heating at 2.45 GHz and 14.0 GHz, respectively, are in operation. Additionally, RF systems with 200 kW and 1 MW of power are being modified and conditioned for operation. The concept provides electrode-less operation and variable thrush'specific impulse at constant power (200 -30 N /5000-30,000 seconds at 10 MW with a 60% efficiency). Optimization for speed or payload are possible with the same engine, giving the rocket great flexibility. Missions to Mars in 90 days are described, and missions to Pluto are under study.

Feliciano, Enectali Figueroa↗
NASA NTRS1990

A probe for real-time images of particle beams and their analyses in a merged-beams apparatus

A real-time charged particle beam probe was developed, which can be used both as a beam diagnostic (beam tuning) and to quantitatively determine the three-dimensional density distribution of a beam. The probe consists of a microchannel plate, an aluminized phosphor screen deposited on a fiber-optic faceplate, a flexible fiber-optic bundle, and a charge injection device (CID) in tandem. Digital or analog video output of the CID is fed into a computer or oscilloscope, respectively, for analysis or observation. The probe can be moved continuously along the beams' paths to obtain 'pictures' of the beam at any desired interval, thus giving three-dimensional form factors. The beams, singly or simultaneously, may be observed on the monitor facilitating the task of beam adjustment for optimum overlap. The digital output is used for quantitative computation of the beam overlaps. The device is linear with beam intensity, but the performance degrades with time due to beam damage of the microchannel plate.

Forand, J. L.↗
NASA NTRS1994

Chemical beam epitaxy for high efficiency photovoltaic devices

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.↗