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Results for “thermal rectification”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Dual Phase Change Thermal Diodes with High Rectification for Thermal Management near Room Temperature

Thermal diodes are passive systems that modulate their thermal resistance depending on the direction of temperature gradient, thereby allowing preferential directional heat flow. A dual phase thermal diode consists of a junction between two phase change materials that have opposing temperature-dependent thermal conductivity trends, and whose performance (i.e., rectification ratio) is related to the ratio of the thermal conductivities of the different phases. In this work, a dual phase change diode with a rectification ratio of ~3.5 for an applied temperature bias of ~40 K is presented, which is among the highest-performing junction diodes based on phase change materials at the macroscale for near room temperature applications. The diode is composed of an aqueous solution of poly(N-isopropylacrylamide), a thermo-responsive polymer, and calcium chloride hexahydrate -- a solid-liquid phase change material. Experimental insights are provided into the contributions of different heat transfer mechanisms, conduction, and convection, and the effect of concentration of the thermo-responsive polymer.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Frictional drag between superconducting LaAlO 3 /SrTiO 3 nanowires

Here we report frictional drag measurements between two superconducting LaAlO 3 /SrTiO 3 nanowires. In these experiments, current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. The frictional drag signal contains both symmetric and anti-symmetric components. The anti-symmetric component arises from the rectification of quantum shot noise in the drive nanowire by the broken symmetry in the drag nanowire. The symmetric component in the drag resistance is ascribed to rectification of thermal noise in the drive nanowire during superconducting-normal transition. The suppression of the symmetric component is observed when a normal nanowire is used as either a drag or drive nanowire with the other nanowire superconducting. The absence of symmetric drag resistance between a normal drag nanowire and a superconducting drive nanowire suggests a higher electron-hole asymmetry in the superconducting LaAlO 3 /SrTiO 3 nanowire arising from the 1D nature of superconductivity at LaAlO 3 /SrTiO 3 interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Roadmap on thermodynamics and thermal metamaterials

Thermal metamaterials represent a transformative paradigm in modern physics, synergizing thermodynamic principles with metamaterial engineering to master heat flow at will. As next-generation technologies demand multi-scale thermal control, this field urgently requires systematic frameworks to unify its multidisciplinary advances. Curated through a global collaboration involving over 50 specialists across 25 subdisciplines, this review primarily summarizes two decades of advancements, ranging from theoretical breakthroughs to functional implementations. The review reveals groundbreaking innovations in heat manipulation through the exploration of both classical and non-classical transport regimes, topological thermal control mechanisms, and quantum-informed phonon engineering strategies. By bridging physical insights like non-Hermitian thermal dynamics and valleytronic phonon transport with cutting-edge applications, we demonstrate paradigm-shifting capabilities: environment-adaptive thermal cloaks, AI-optimized metamaterials, and nonlinear thermal circuits enabling heat-based computation. Experimental milestones include 3D thermal null media with reconfigurable invisibility and thermal designs breaking classical conductivity limits. Here, this collaborative effort establishes an indispensable roadmap for physicists, highlighting pathways to quantum thermal management, entropy-controlled energy systems, and topological devices. As thermal metamaterials transition from laboratory marvels to technological cornerstones, this work provides the foundational lexicon and design principles for the coming era of intelligent thermal matter.

heat conduction control↗

The effect of temperature oscillations on energy storage rectification in harmonic systems

Abstract Rectification, the preferential transport of a current in one direction through a system, has garnered significant attention in molecules because of its importance for controlling thermal and electronic currents at the nanoscale. Here, we report the presence of energy storage rectification effects in a molecular chain. This phenomenon is generated by subjecting a harmonic molecular chain to an oscillating temperature gradient and showing that the energy absorption rate of the system depends on the direction of the gradient. We examine how the energy storage rectification ratios in the chain are affected by the oscillating gradient, asymmetry in the chain, and the system parameters. We find that energy storage rectification can be observed in harmonic lattice structures with time-dependent temperatures and that, correspondingly, anharmonicity is not required to generate this rectification mechanism in such systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A cryogenic near-field thermal diode leveraging superconducting phase transitions

Control of charge and heat transport is essential for computing and thermal management technologies. Recent work with superconducting materials has shown rectified electrical supercurrents near liquid helium temperatures. However, despite large theoretical interest and expected impact on quantum technologies, no experiments have demonstrated control of nanoscale radiative heat currents at cryogenic temperatures. Here we study photon-mediated thermal transport in nanogaps between niobium and gold. Using novel scanning calorimetric probes and nanofabricated devices, we reveal a ~20-fold suppression of radiative heat transport, when niobium transitions from the metallic to the superconducting state. Taking advantage of this effect, we also demonstrate a niobium-based cryogenic thermal diode with a heat rectification ratio of 70%. As a result, the experimental techniques and advances presented here will enable studying nanoscale thermal transport in quantum materials and advancing thermal management of superconducting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Near-field photonic thermal diode based on hBN and InSb films

A thermal diode is a two-terminal device that allows heat to transfer more easily in one direction (forward bias) than in the opposite direction (reverse bias). A photonic thermal diode operates in a contactless mode and may afford a large operating temperature range. Here, a near-field photonic thermal diode based on hexagonal boron nitride (hBN) and indium antimonide (InSb) films is theoretically demonstrated. In this work, the temperature dependence of the interband absorption of InSb is used to couple (or decouple) with the hyperbolic phonon polaritons in hBN. The numerical analysis predicts a rectification ratio greater than 17 for a 10 nm vacuum gap, when operating at an average temperature of 300 K and a temperature difference of 200 K. The calculated rectification ratio exceeds 35 at higher average temperatures with larger temperature differences.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Light-Matter Interaction in Ultrastable Tunneling Nanogaps

Light emission and detection through tunnel junctions have emerged as a promising platform for studying nanoscale light–matter interactions, including electroluminescence and photoassisted transport. However, controlling these interactions in the tunneling regime has been challenging due to complex underlying mechanisms that remain poorly understood. A major obstacle is the difficulty in forming stable junctions that can function reliably over extended periods. In this study, we fabricate ultrastable tunneling junctions consisting of epitaxial indium–tin-oxide, epitaxial lutetium oxide, and gold. With their stable and consistent tunneling currents, we investigate photon-assisted transport phenomena using simple direct-current detection. Our results demonstrate that optical rectification is the primary contributor to the laser-induced current, alongside thermal effects and hot-electron currents. Furthermore, owing to their epitaxial nature and high breakdown threshold, this ultrastable platform holds promise for future real-world applications, including nanoscale light sources and multifunctional photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗

Radiofrequency sheath rectification on WEST: application of the sheath-equivalent dielectric layer technique in tokamak geometry *

Radiofrequency sheath rectification is a phenomenon relevant to the operation of Ion Cyclotron Range of Frequencies (ICRFs) actuators in tokamaks. Techniques to model the sheath rectification on 3D ICRF antenna geometries have only recently become available (Shiraiw et al 2023 Nucl. Fusion 63 026024; Beers et al 2021 Phys. Plasmas 28 093503). In this work, we apply the 'sheath-equivalent dielectric layer' technique, used previously only on linear devices (Beers et al 2021 Phys. Plasmas 28 103508), in tokamak geometry, computing rectified sheath potentials on the WEST ICRF antenna. Advancing the state of the art in sheath rectification modeling, we compute the sheath potentials not just on the limiters, but also on the Faraday Screen bars. The calculations show a peak rectified DC potential of 300 V on the limiters and 500 V on the Faraday screen. Assuming a typical sputtering yield curve, the RF sheath rectification increases the sputtering yield from the limiters by a factor of 2.6 w.r.t. the sputtering due to the non-rectified thermal sheath.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for PN Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

2D/3D integration↗

Simulations of ICRF Heating for SPARC during First Campaign and Primary Reference-Like Discharge using the Stix Code

High magnetic field tokamaks, like SPARC, rely on ion cyclotron radio frequency heating (ICRF) to reach fusion relevant temperatures. The SPARC tokamak will have 14 ICRF antennas in 7 toroidal locations delivering > 20 MW of power to the plasma. New capabilities with the full wave cold plasma solver, Stix, now allow for resolving the wave-particle resonances using lower order thermal corrections to capture core absorption of Landau damping and ion resonances in devices like SPARC. Favorable comparisons to the TORIC codes give confidence in the single pass absorption of this model to accurately capture the strength of edge interactions of the RF. Using this new dielectric formulation in the Stix code, simulations of the 2D poloidal cross section of SPARC are completed for the first campaign and primary reference-like discharges (PRD-like). A scan of the minority ion concentrations of helium-3 is performed and shows the expected behavior that as the helium-3 decreases the amount of single pass absorption also decreases which is seen in both scenarios. Additionally, both scenarios show only slight differences in single-pass absorption for the range of 3% to 5% helium-3 allowing for more flexibility in experiments. This study also highlights the differences between the first campaign and PRD-like with the first campaign discharges showing much more multi-pass absorption and an effect of confining the wave to a smaller portion of the cross-section due to the fast wave cut-off. This latter result suggests that far-field sheath rectification at the high-field side would be minimal for the first campaign scenario.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗