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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Accelerated Voltage Regulation in Multi-Phase Distribution Networks Based on Hierarchical Distributed Algorithm

Here, we introduce a hierarchical distributed algorithm to solve optimal power flow (OPF) problems that aim at dispatching controllable distributed energy resources (DERs) for voltage regulation at minimum cost. The proposed algorithm highlights unprecedented scalability to large multi-phase distribution networks by jointly exploring the tree/subtrees structure of a large radial distribution network and the structure of the linearized distribution power flow (LinDistFlow) model to derive a hierarchical, distributed implementation of the primal-dual gradient algorithm that solves OPF. The proposed implementation significantly reduces the computation loads compared to the centrally coordinated implementation of the same primal-dual algorithm without compromising optimality. Numerical findings on a 4,521-node test feeder show that the designed algorithm achieves more than 10-fold acceleration in the speed of convergence compared to the centrally coordinated primal-dual algorithm through reducing and distributing computational loads.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

The performance evaluation of direct detection electron energy-loss spectroscopy at 200 kV and 80 kV accelerating voltages

Direct electron detectors (DeDs) have been widely used for imaging studies because of their higher beam sensitivity, lower noise, improved pixel resolution, etc. However, there have been limited studies related to the performance in spectroscopic applications for the direct electron detection. Hereby, taking the advantage of the DeD installed on a high-performance electron energy-loss spectrometer, we systematically studied the performance of a DeD (Gatan's K2 IS) fitted on an aberration-corrected transmission electron microscope (TEM) equipped with an electron monochromator. Using SrTiO3 as the model system, the point spread function in the zero-loss region of the spectrum and the performance for core loss spectroscopy have been investigated under both 200 kV and 80 kV operating conditions. We demonstrate that the K2 detector can achieve an overall better performance at 200 kV than a charge coupled device (CCD) detector. At 80 kV, the K2 DeD is still better than a CCD, except for the relative broad tails of the zero-loss peak. The signal-to-noise ratio is very close for DeD and CCD under 80 kV. Based on our data obtained at different operating voltages, it is clear that DeD will benefit the microscopy community and boost the development of cutting-edge materials science studies by pushing the frontiers in electron energy-loss spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Control and Service Life Extension of Accelerator's Anode Voltage Regulator

Accelerator's beam quality is highly affected by the anode voltage's stability. The accelerator examined in this study is an ion implantation accelerator which anode voltage is regulated by an electromechanical system shown in Fig 1. The system works by stepping down the input grid voltage to generate a high anode voltage of up to 2.5 kV through a motor generator. It was desired that the system be able to correct for disturbances and instabilities in the input voltage swiftly while minimizing overshoots and steady state errors. Moreover, it should maintain such capability satisfactorily despite of degradations. It was predicted that this adaptive capability would be limited to a certain extent where if degradations become too severe, system's performance would deteriorate considerably such that maintenance actions or component replacements are required. The mechanism to control anode voltage, estimate and extend the system's Remaining Useful Life (RUL) in an integrated manner is explored in this paper. (authors)

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Low-damage electron beam lithography for nanostructures on Bi 2 Te 3 -class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi 2 Se 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. In conclusion, although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

42 ENGINEERING↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Linear Induction Accelerator Cell Voltage Calibration Using Compact Electron Permanent Magnet Spectrometer

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using electron Linear Induction Accelerators (LIA’s). The strict requirements for flash radiography require a detailed understanding of the LIA’s performance, including precision measurements of the electron beam energy. Axis-1 of DARHT produces a 20 MeV, 2 kA, 80-ns-FWHM electron beam. Electronic measurement with cell-voltage monitors which consists of a 75 ohm load resistor and a current viewing resistor (CVR) that are coupled together and injector capacitive monitors (EVACSUM) are summed to give the total beam energy at the output of the accelerator. Calibration of these monitors was last done in 1999 and is needed. Using the Compact electron Permanent Magnet Spectrometer (CePMSpec), we have developed a technique for measuring and adjusting the calibration of the accelerator cell load resistor/CVR by using the total energy of the beam. Each pair of cells is driven by pulsed power Blumleins, and each Blumlein is charged by a Blumlein Charge Unit (BCU). There are 64 cells and 32 Blumleins and BCUs. This technique is applied to all 32 BCUs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Athermal glass work at the nanoscale: Engineered electron-beam-induced viscoplasticity for mechanical shaping of brittle amorphous silica

Amorphous silica deforms viscoplastically at elevated temperatures, which is common for brittle glasses. The key mechanism of viscoplastic deformation involves interatomic bond switching, which is thermally activated. Here, for this study, we precisely control the mechanical shaping of brittle amorphous silica at the nanoscale via engineered electron–matter interactions without heating. We observe a ductile plastic deformation of amorphous silica under a focused scanning electron beam with low acceleration voltages (few to tens of kilovolts) during in-situ compression studies, with unique dependence on the acceleration voltage and beam current. By simulating the electron–matter interaction, we show that the deformation of amorphous silica depends strongly on the volume where inelastic scattering occurs. The electron–matter interaction via e-beam irradiation alters the Si–O interatomic bonds, enabling the high-temperature deformation behavior of amorphous silica to occur athermally. Finally, by systematically controlling the electron–matter interaction volume, it is possible to mechanically shape the brittle amorphous silica on a small scale at room temperature to a level comparable to glass shaping at high temperatures. The findings can be extended to develop new fabrication processes for nano- and microscale brittle glasses.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Conversion of spectral characteristics of laser radiation in periodic domain structures written by the electron-beam method in planar waveguides formed by Ti diffusion in Y-oriented LiNbO{sub 3}

Periodic domain structures for nonlinear conversion of spectral characteristics of laser radiation in the planar Ti : LiNbO{sub 3} waveguide have been formed by the method of electron-beam writing. Domain gratings with a spatial period of 6.50 μm formed in the Y-cut plate over a wide range of accelerating voltages have been visualised by the method of second harmonic generation microscopy (SHG-microscopy) in transmitting geometry and at waveguide excitation. It is found that the domain structure written at an accelerating voltage of 10 kV in a waveguide with an exponential refractive index profile and an effective thickness of 1.75 μm is characterised by high homogeneity. It is composed of continuous domain rows and provides near-quasi-phase-matching radiation conversion at a wavelength of 1053 nm into the second harmonic for the TE{sub 0} → TE{sub 1} waveguide process. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A compact high-resolution X-ray ion mobility spectrometer

For the ionization of gaseous samples, most ion mobility spectrometers employ radioactive ionization sources, e.g., containing {sup 63}Ni or {sup 3}H. Besides legal restrictions, radioactive materials have the disadvantage of a constant radiation with predetermined intensity. In this work, we replaced the {sup 3}H source of our previously described high-resolution ion mobility spectrometer with 75 mm drift tube length with a commercially available X-ray source. It is shown that the current configuration maintains the resolving power of R = 100 which was reported for the original setup containing a {sup 3}H source. The main advantage of an X-ray source is that the intensity of the radiation can be adjusted by varying its operating parameters, i.e., filament current and acceleration voltage. At the expense of reduced resolving power, the sensitivity of the setup can be increased by increasing the activity of the source. Therefore, the performance of the setup can be adjusted to the specific requirements of any application. To investigate the relation between operating parameters of the X-Ray source and the performance of the ion mobility spectrometer, parametric studies of filament current and acceleration voltage are performed and the influence on resolving power, peak height, and noise is analyzed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Runaway electrons and magnetic island confinement

The breakup of magnetic surfaces is a central feature of ITER planning for the avoidance of damage due to runaway electrons. Rapid thermal quenches, which lead to large accelerating voltages, are thought to be due to magnetic surface breakup. Impurity injection to avoid and to mitigate both halo and runaway electron currents utilizes massive gas injection or shattered pellets. The actual deposition is away from the plasma center, and the breakup of magnetic surfaces is thought to spread the effects of the impurities across the plasma cross section. The breakup of magnetic surfaces would prevent runaway electrons from reaching relativistic energies were it not for the persistence of non-intercepting flux tubes. These are tubes of magnetic field lines that do not intercept the walls. In simulations and in magnetic field models, non-intercepting flux tubes are found to persist near the magnetic axis and in the cores of magnetic islands even when a large scale magnetic surface breakup occurs. As long as a few magnetic surfaces reform before all of the non-intercepting flux tubes dissipate, energetic electrons confined and accelerated in these flux tubes can serve as the seed electrons for a transfer of the overall plasma current from thermal to relativistic carriers. The acceleration of electrons is particularly strong because of the sudden changes in the poloidal flux that naturally occur in a rapid magnetic relaxation. Furthermore, the physics of magnetic islands as non-intercepting flux tubes is studied. Expressions are derived for (1) the size of islands required to confine energetic runaway electrons, (2) the accelerating electric field in an island, (3) the increase or reduction in the size of an island by the runaway electron current, (4) the approximate magnitude of the runaway current in an island, and (5) the time scale for the evolution of an island.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

SU-F-T-554: Dark Current Effect On CyberKnife Beam Dosimetry

Purpose: All RF linear accelerators produce dark current to varying degrees when an accelerating voltage and RF input is applied in the absence of electron gun injection. This study is to evaluate how dark current from the linear accelerator of CyberKnife affect the dose in the reference dosimetry. Methods: The G4 CyberKnife system with 6MV photon beam was used in this study. Using the ion chamber and the diode detector, the dose was measured in water with varying time delay between acquiring charges and staring beam-on after applying high-voltage into the linear accelerator. The dose was measured after the time delay with over the range of 0 to 120 seconds in the accelerating high-voltage mode without beam-on, applying 0, 10, 50, 100, and 200 MUs. For the measurements, the collimator of 60 mm was used and the detectors were placed at the depths of 10 cm with the source-to-surface distance of 80 cm. Results: The dark current was constant over time regardless of MU. The dose due to the dark current increased over time linearly with the R-squared value of 0.9983 up to 4.4 cGy for the time 120 seconds. In the dose rate setting of 720 MU/min, the relative dose when applying the accelerating voltage without beam-on was increased over time up to 0.6% but it was less than the leakage radiation resulted from the accelerated head. As the reference dosimetry condition, when 100 MU was delivered after 10 seconds time delay, the relative dose increased by 0.7% but 6.7% for the low MU (10 MU). Conclusion: In the dosimetry using CyberKnife system, the constant dark current affected to the dose. Although the time delay in the accelerating high-voltage mode without beam-on is within 10 seconds, the dose less than 100 cGy can be overestimated more than 1%.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2018

Beam Breakup in a Solid-State Powered Linear Induction Accelerator

Scorpius is a new multi-pulse linear induction accelerator (LIA) for flash radiography of large-scale, explosively-driven hydrodynamic experiments. It has been proposed to use solid-state pulsed-power modules to provide the accelerating voltages for Scorpius. It is expected that this approach can provide four programmable 50-kV accelerating pulses to a single gap.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Towards advanced polarized electron sources

Polarized electrons play an important role in high-energy and nuclear physics, and their properties have also been exploited in ultrafast electron microscopy. Currently, gallium arsenide crystals illuminated by circular polarized infrared laser light are commonly used for generating polarized electrons. However, the achievable accelerating voltage and the gradient of these electrostatic sources limit the beam quality and quantity. A solution could be to combine gallium arsenide photocathodes with radio-frequency electron guns, which are capable of accelerating beams with significantly higher gradients and voltage. Here we report the successful operation of a gallium arsenide photocathode in a superconducting radio-frequency gun. Our findings are relevant for future sources of polarized electrons.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗