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Addamane, Sadhvikas Jayachandra

Publications and source records attributed to Addamane, Sadhvikas Jayachandra.

Ultrafast Surface Phosphor Thermometry for Pulsed-power and Hostile Environments

Modern concepts for next generation pulsed power (NGPP) are slated to deliver up to ten times the energy of Z today. An increase of this magnitude is concerning insofar that Z currently exhibits sizable amounts of inner magnetically insulated transmission line (MITL) loss current on the order of 5-10%. Loss phenomenon in these systems are complex and electrode heating and subsequent thermal desorption are a leading cause. Rapid heat-driven thermal desorption of contaminants scales as the square of the current. Therefore, even a modest doubling of drive current would yield an ~ 4X in non-linear surface electrode heating, quickening thermal desorption-based current loss. Exacerbating these physics is a current inability to measure ultra fast heating rates (>20°C/ns), which are paramount to benchmarking and code validation critical to NGPP design – as an empirical approach is not viable. Therefore, Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT) was developed as a new diagnostic for measurement of GHz-scale electrode heating. The discovery of UP-SHOT leveraged expertise in Engineering Science, Material Science, Pulsed-Power, and the Center for Integrated Nanotechnologies. This report includes information on: 1) The preparation of zinc oxide (ZnO) films, characterization, post-deposition treatments 2) Time-resolved photoluminescence at elevated temperatures and thermographic sensitivity

36 MATERIALS SCIENCE

BeyondFingerprinting: AI-guided discovery of robust materials & processes

BeyondFingerprinting was a 2021-2024 Sandia Grand Challenge LDRD exploring the potential to develop new resilient materials and manufacturing processes by taking an artificial-intelligence (AI)-guided approach that integrates human-subject-matter expertise with algorithms enriched with physics-based constraints to unearth process-structure-property correlations. Such algorithms, trained on high-throughput experiments and simulations, are shown to serve as surrogate models that efficiently detect key “fingerprints” in materials data, prognose material performance, and guide effective process improvements. To accelerate broader adoption across mission areas, this AI-guided approach was demonstrated with three complex process-centric exemplars: electroplating, physical vapor deposition, and laser powder bed fusion. Together, these exemplars impact nearly every hardware component relevant to DOE and NNSA national security missions.

36 MATERIALS SCIENCE

Guided combinatorial synthesis and automated characterization expedites the discovery of hard, electrically conductive Pt x Au 1-x films

Sputter-deposited Pt-Au thin films have been reported to develop a hard, stable, nanocrystalline structure, yet little is known about how these characteristics vary with Pt x Au 1-x composition and process conditions. Toward this end, this document describes an extensive, combinatorial Pt-Au thin film library including characterized film compositions, structure, and properties. Complemented by kinematic Monte Carlo simulations of codeposition, a broad range of Pt x Au 1-x compositions (from x ~ 0.02 to 0.93) was first established by sputtering with varied magnetron powers and gun tilt angles. Further, the produced films were subsequently interrogated using automated nanoindentation, x-ray reflectivity, x-ray diffraction, atomic force microscopy, surface profilometry, four-point probe sheet resistance techniques, and wavelength dispersive spectroscopy in order to determine how hardness, modulus, density, surface roughness, structure, and resistivity vary with film stoichiometry and process parameters. Combinatorial films displayed an assortment of properties with the hardness of some films exceeding values reported previously for this material system. High hardness, high modulus, and low resistivity were generally attained when using increased deposition energy and reduced angle-of-incidence processes. Overall, the research identified promising, new Pt x Au 1-x compositions for future study and pinpointed strategies for improved deposition.

36 MATERIALS SCIENCE

Growth and characterization of ferromagnetic Ga 2 O 3 :(Cr, Mn)

The goal of this Exploratory Express project was to explore the possibility of tunable ferromagnetism in Mn or Cr incorporated epitaxial Ga 2 O 3 films. Tunability of magnetic properties can enable novel applications in spintronics, quantum computing, and magnetism-based logics by allowing control of magnetism down to the nanoscale. Carriers (electrons or holes) mediated ferromagnetic ordering in semiconductor can lead to tunable ferromagnetism by leveraging the tunability of carrier density with doping level, gate electric field, or optical pumping of the carriers. The magnetic ions (Cr or Mn) in Ga 2 O 3 act as localized spin centers which can potentially be magnetically coupled through conduction electrons to enable ferromagnetic ordering. Here we investigated tunable ferromagnetism in beta Ga 2 O 3 semiconductor host with various n-doping levels by incorporating 2.4 atomic percent Mn or Cr. The R&D approach involved growth of epitaxial Ga 2 O 3 film on sapphire or Ga 2 O 3 substrate, implantation of Mn or Cr ions, annealing of the samples post implantation, and magnetic measurements. We studied magnetic behavior of Mn:Ga 2 O 3 as a function of different n-doping levels and various annealing temperatures. The vibrating sample magnetometry (VSM) measurement exhibited strong ferromagnetic signals from the annealed Mn:Ga 2 O 3 sample with n-doping level of 5E19 cm -3 . This ferromagnetic behavior disappears from Mn:Ga 2 O 3 when the n-doping level is reduced to 5E16 cm -3 . Although these results are to be further verified by other measurement schemes due to the observation of background ferromagnetism from the growth substrate, these results indicate the possibility of tunable ferromagnetism in Mn:Ga 2 O 3 mediated by conduction electrons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Audio misinformation encoding via an on-phone sub-terahertz metasurface

We demonstrate a wireless security application to protect the weakest link in phone-to-phone communication, using a terahertz metasurface. To our knowledge, this is the first example of an eavesdropping countermeasure in which the attacker is actively misled.

97 MATHEMATICS AND COMPUTING

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

This study conducts a comparative analysis, using non-equilibrium Green’s functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (T max ) of ~ 250 K for both devices. However, experimentally, one device reaches a T max of ~ 250 K and the other a T max of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in T max could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record T max of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

77 NANOSCIENCE AND NANOTECHNOLOGY

Non-contact imaging of terahertz surface currents with aperture-type near-field microscopy

Terahertz (THz) near-field imaging and spectroscopy provide valuable insights into the fundamental physical processes occurring in THz resonators and metasurfaces on the subwavelength scale. However, so far, the mapping of THz surface currents has remained outside the scope of THz near-field techniques. In this study, we demonstrate that aperture-type scanning near-field microscopy enables non-contact imaging of THz surface currents in subwavelength resonators. Through extensive near-field mapping of an asymmetric D-split-ring THz resonator and full electromagnetic simulations of the resonator and the probe, we demonstrate the correlation between the measured near-field images and the THz surface currents. The observed current dynamics in the interval of several picoseconds reveal the interplay between several excited modes, including dark modes, whereas broadband THz near-field spectroscopy analysis enables the characterization of electromagnetic resonances defined by the resonator geometry.

Norman, Sarah