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Danyluk, S.

Publications and source records attributed to Danyluk, S..

Residual stress measurement in silicon sheet by shadow moire interferometry

A shadow moire interferometry technique has been developed to measure residual strain in thin silicon sheet. The curvature of a segment of sheet undergoing four-point bending is analyzed to include the applied bending moments, the in-plane residual stresses, and the 'end effect' of the sheet since it is of finite length. The technique is applied to obtain residual stress distributions for silicon sheet grown by the edge-defined film-fed growth technique.

Kwon, Y.

Smoother Scribing of Silicon Wafers

Proposed new tool used to scribe silicon wafers into chips more smoothly than before. New scriber produces surface that appears ductile. Scribed groove cuts have relatively smooth walls. Scriber consists of diamond pyramid point on rigid shaft. Ethanol flows through shaft and around point, like ink in ballpoint pen. Ethanol has significantly different effect for scribing silicon than water, used in conventional diamond scribers.

Danyluk, S.

Surface property modification of semiconductors by fluid absorption

The University of Illinois at Chicago program to develop an understanding of the basic mechanisms of deformation during the lubricated cutting of silicon is discussed. Also described is the development of a nondestructive measurement technique for residual stress in a silicon sheet.

Danyluk, S.

Residual stresses of thin, short rectangular plates

The analysis of the residual stresses in thin, short rectangular plates is presented. The analysis is used in conjunction with a shadow moire interferometry technique by which residual stresses are obtained over a large spatial area from a strain measurement. The technique and analysis are applied to a residual stress measurement of polycrystalline silicon sheet grown by the edge-defined film growth technique.

Andonian, A. T.

Microhardness of carbon-doped (111) p-type Czochralski silicon

The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

Danyluk, S.

Silicon sheet surface studies

Results of the program are presented on developing an understanding of the basic mechanisms of abrasion and wear of silicon and on the nondestructive measurement of residual stresses in sheet silicon. Experiments were conducted at various temperatures and in the presence of various fluids. In abrasive wear, it was shown that dislocations, microtwins, and cracks are generated beneath the contact surface. Residual stresses in ribbon by the edge defined film growth process were measured by use of a shadow moire interferometry technique.

Danyluk, S.

Silicon sheet surface studies

Several activities were performed in the area of silicon sheet surface studies. An interferometry technique was developed for measuring residual stresses in short, thin silicon sheets. Simulation of abrasion of silicon by diamond and by scrating and indentation tests was carried out. The wear rate in silicon was correlated with a wear model.

Danyluk, S.

Surface property modification of silicon

The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

Danyluk, S.

Influence of fluids on the abrasion of silicon by diamond

Silicon wafers ((100)-p-type) were abraded at room temperature in acetone, absolute ethanol and water by a pyramid diamond and the resulting groove depth was measured as a function of normal force on the diamond and the absorbed fluids, while all other experimental conditions were held constant. The groove depth rates are in the ratio of 1:2:3 for water, absolute ethanol, and acetone, respectively, for a constant normal force. The groove depth rate is lower when the normal force is decreased. The silicon abraded in the presence of water was chipped as expected for a classical brittle material while the surfaces abraded in the other two fluids showed ductile ploughing as the main mechanism for silicon removal.

Danyluk, S.

Study of abrasive wear rate of silicon using n-alcohols

The work carried out at the University of Illinois at Chicago for the Flat-Plate Solar Array Project under contract No. 956053 is summarized. The abrasion wear rate of silicon in a number of fluid environments and the parameters that influence the surface mechanical properties of silicon were determined. Three tests were carried out in this study: circular and linear multiple-scratch test, microhardness test and a three-point bend test. The pertinent parameters such as effect of surface orientation, dopant and fluid properties were sorted. A brief review and critique of previous work is presented.

Danyluk, S.