Engineering topics

Erickson, J. J.

Publications and source records attributed to Erickson, J. J..

6 records

NASA NTRS1980

Silicon nitride passivation of IC's

Feasibility study looks at effectiveness of silicon nitride passivation coating against moisture and mobile ions. Coating was tested on CMOS microcircuits. Tests included temperature cycling, high-temperature electrical stress, and temperature and humidity exposure. Report concludes plastic-encapsulated circuits with protective coating exhibit high survival rates; it includes tables summarizing test results and figures that show effects of flexing.

Erickson, J. J.↗

NASA NTRS1980

Quantitative optical scanning tests of complex microcircuits

An approach for the development of the optical scanner as a screening inspection instrument for microcircuits involves comparing the quantitative differences in photoresponse images and then correlating them with electrical parameter differences in test devices. The existing optical scanner was modified so that the photoresponse data could be recorded and subsequently digitized. A method was devised for applying digital image processing techniques to the digitized photoresponse data in order to quantitatively compare the data. Electrical tests were performed and photoresponse images were recorded before and following life test intervals on two groups of test devices. Correlations were made between differences or changes in the electrical parameters of the test devices.

Erickson, J. J.↗

NASA NTRS1979

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Peters, J. W.↗

NASA NTRS1979

Testing integrated circuits by photoexcitation

System for testing integrated circuits uses photoexcitation to determine quality of internal elements inaccessible to electrical tests. Approach prevents direct monitoring of internal operation of circuit by measurements at external terminals and is superior to electron beam scanning due to nondestructiveness.

Erickson, J. J.↗

NASA NTRS1977

Optical scanning tests of complex CMOS microcircuits

The new test method was based on the use of a raster-scanned optical stimulus in combination with special electrical test procedures. The raster-scanned optical stimulus was provided by an optical spot scanner, an instrument that combines a scanning optical microscope with electronic instrumentation to process and display the electric photoresponse signal induced in a device that is being tested.

Levy, M. E.↗

NASA NTRS1974

Electromagnetic radiation screening of microcircuits for long life applications

The utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits was studied. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.

Brammer, W. G.↗