Monolithic Power Amplifiers Covering 70-115 GHz
A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.
power amplifiers monolithic microwave integrated c↗
Engineering topics
Gaier, T.
Publications and source records attributed to Gaier, T..
IF Amplifier Stability for the Heterodyne Instrument for FIRST (HIFI)
The Heterodyne Instrument for FIRST (HIFI) is a heterodyne receiver system which has an intermediate frequency (IF) amplifier that will likely exhibit 1/f-type gain fluctuations.
HIFI FIRST amplifier stability heterodyne instrume↗
MMIC Power Amplifiers as Local Oscillator Drivers for FIRST
The Heterodyne Instrument (HIFI) for the Far-Infrared and Sub-millimeter Telescope (FIRST) requires local oscillators well into the terahertz frequency range.
power↗
W-Band InP Wideband MMIC LNA with 30K Noise Temperature
This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.
Weinreb, S.↗
A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
amplifies↗
MMIC Power Amplifier Chip Set Developed for 70-115 GHz
Explore the source record for details and available documents.
MMIC power amplifier THz range HEMT process↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
low↗
W-Band InP Wideband MMIC LNA With 30K Noise Temperature
This paper describes a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range.
low↗
On-Wafer Testing of Circuits Through 220 GHz
We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz.
MMIC↗
A 90 GHz Amplifier Assembled Using Flip-Chip Technology
This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
FET amplifiers Millimeter wave FETs bump-bonding m↗
An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz
We present the highest frequency performance of any solid state MMIC amplifier.
HEMT↗
InP HEMT MMICs for Radiometer Applications
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).
low noise millimeter wave receivers InP HEMT monol↗
A W-Band HEMT Based Power Amplifier Module for Millimeter-Wave LO Multiplier
We report on the performance of power amplifiers as local oscillator drivers for millimeter and submillimeter-wave receivers.
power↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Kok, Y. L.↗