Engineering topics
Publications and source records attributed to Heidel, David F..
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.
We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space. The analysis incorporates the galactic cosmic ray background, trapped proton, and solar heavy ion environments as well as the October 1989 and July 2000 solar particle events.
A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.
Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation.
A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.