Engineering topics

Johnston, Steve (ORCID:0000000333088267)

Publications and source records attributed to Johnston, Steve (ORCID:0000000333088267).

At least 19 records

DOE OSTI2024

In-Situ Luminescence Imaging of Perovskite Solar Cells Demonstrates Increasing Spatial Nonuniformity Upon Light-Soaking Degradation

In this work we investigate degradation rates of triplecation mixed-halide perovskite p-i-n solar cells. We present an accelerated stress testing procedure using periodic blue light-soaking at elevated temperatures until devices reach ~80% of their initial efficiency. We track light-induced degradation via in-situ: photoluminescence (PL), current-voltage (I-V) curves, and transient photovoltage. Devices underwent 165 hours of light bias at 65degrees C. Results suggest that spatial uniformity in PL intensity decreases as device degradation increases. This investigation lays the groundwork to address the current gap in understanding the interplay between device performance and the evolution of macroscopic features in perovskite solar cells. Thus, we believe spatial characterization techniques will play a crucial role in the commercialization of perovskite solar cells.

imaging↗

DOE OSTI2024

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging↗

DOE OSTI2024

High Temperature Copper Metallization: Demand, Hurdles and Reliability

As newer cells structures come online, the pressing need to replace silver in the metallization pastes has renewed interest in alternative technologies employing base metals. Copper typically leads the charge with its abundance and lower cost but has faced numerous obstacles from relatively higher oxidation and diffusion rates which can damage the lifetime of the devices. In this study, a low-cost alternative to silver metallization pastes has been shown on PERC cells. The screen printable copper paste can be fired in air at temperatures >500 degrees C, and the impact of processing conditions and equipment on the performance and reliability of 274 cm2 cells have been evaluated. Through damp heat testing of micro-modules using 16 cm2 cells, routes that can lead to both the failure and success of durable contacts have been demonstrated.

copper↗

DOE OSTI2024

Developments for Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a significant rate. A novel module architecture has been demonstrated that has potential for reducing manufacturing cost while improving module reliability and recycling for c-Si PV which utilizes an edge-seal. Referred to as Edge Sealed Module (ESM), this architecture eliminates the vacuum lamination process and cross-linked encapsulants on the interior of the module. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with National Renewable Energy Laboratories (NREL). These modules are being tested and compared to traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while enhancing module performance.

costs↗

DOE OSTI2024

Exploring the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

In this work, we present the performance and reliability of a fire-through copper (Cu) paste which has been screen printed on c-Si solar cell with passivated emitter rear contact (PERC). The Cu paste is fired through silicon nitride (SiN) anti-reflection coating at a peak temperature of 630 degrees C . SEM images of the Cu paste show a Cu core with ~200 nm oxide shell around the particles. This conductive oxide layer acts as a diffusion barrier between Cu and Si and prevents the degradation of cell performance during accelerated aging conditions. An efficiency of 19.250% has been achieved with Voc=654mV,FF= 76.68%, Jsc=38.40 m.A/cm 2 for champion PERC cells. Accelerated testing of the PERC mini-modules in damp heat chamber with 85 degrees C and 85% humidity have demonstrated that the devices are operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper↗

DOE OSTI2024

Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

A bifacial silicon heterojunction solar cell demands approximately 210 mg usage of silver paste (9 busbars, 24.5%, bifacial, M6 size wafer). Copper is an excellent alternative to silver: 100x cheaper, similar elecvtrical resistivities, and 1000x more abundant. Successful demonstration of large area selective emitter PERC solar cells using Cu fire-through paste with FF approximately 75% and approximately 19%. Paste chemistry results in oxide-based Cu diffusion barrier, leading to good reliability of the devices: 1000h DHT giving a 3.5% efficiency drop. The additional series resistance still needs to be lowered. Printed and fired cell performance is governed mostly by pFF, especially J02 ; same for DHT degradation. Further improvement in printing and firing optimization for lower series resistance and higher FF.

Ag↗

DOE OSTI2024

Exploring the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include 1) bulk Cu has a similar conductivity to Ag (1.7 mu O-cm for Cu, 1.6 mu O-cm for Ag) and 2) Cu is approximately 100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper (Cu) contacts include 1) easy oxidation and 2) diffusion into the Si cell and recombination activity.

copper paste↗

DOE OSTI2024

Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells

We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cells due to its fire-through nature. Champion PERC cells have achieved ....efficiency with ...parameters . Accelerated testing to investigate reliability performance of the SE- PERC mini-modules were carried out in damp heat chamber with 85oC and 85% humidity. The devices were found to be operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper paste↗

DOE OSTI2024

Bifacial Photovoltaic Module Degradation Dynamics

In a comprehensive study conducted at NREL's 75 kW bifacial single-axis-tracked field, accelerated degradation was observed in four out of five bifacial silicon photovoltaic (PV) module technologies when compared to their monofacial counterparts. Root cause analysis of accelerated bifacial degradation involved various analytical tools and techniques. This included employing RdTools to identify rates of power loss, conducting measurements on fielded and control modules using infrared imaging, electroluminescence (EL) and photoluminescence (PL), quantum efficiency (QE) analysis, IV-curves assessment, as well as utilizing handheld Raman and reflectance measurement targeted at anti-reflective coating. Most cases pointed to carrier lifetime degradation causing Voc loss and simultaneous Isc loss. In some cases, Isc further decreases likely due to optical effects from encapsulant degradation. The outcomes and methodologies employed in this investigation are documented in this publication. This study's significance is further emphasized by placing the findings within the broader context of the performance and degradation of various bifacial systems, as identified in the PV Fleets data.

bifacial↗

DOE OSTI2024

Investigation of Local Parameters of PERC Solar Cells Metallized with Screen Printed Cu-Paste

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include: 1) bulk Cu has a similar conductivity to Ag (1.7 one millionth O-cm for Cu, 1.6 one millionth O-cm for Ag, and 2) Cu is -100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper contacts include: 1) easy oxidation, and 2) diffusion into the Si cell and recombination activity. To summarize: 1) Rs map shows some regions with very high Rs, indicating no contact in those areas; 2) the histogram shows the peak Rs -5 ohm.cm2, which explains the high FF loss due to Rs; and 3) DLIT indicates non-uniformity in J01 and J02.

copper↗

DOE OSTI2023

In-Situ Photostability Analysis of Perovskite Solar Cells by Time-Evolving Photoluminescence Imaging

In this work we investigate reversible metastabilities and irreversible degradation due to light soaking of triple-cation mixed-halide perovskite p-i-n solar cells. We use spatially resolved luminescence imaging to document the spatial inhomogeneities that exist even in high-performance devices with median efficiencies >20%. We monitor light-soaking degradation in-situ using time-evolving photoluminescence images, electro-luminescence images, and transient photovoltage. Post-stress measurements of external quantum efficiency and Kelvin- probe force microscopy suggest that long-term degradation primarily affects electrode interfaces rather than the absorber layer.

electroluminescence↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.

capacitance↗

DOE OSTI2023

Luminescence and Thermal Imaging Applied to Half-Cut-Cell and Emitter-Wrap-Through-Cell Modules

Imaging techniques provide spatial details and visualization of module defects and degradation mechanisms that affect energy conversion efficiency and performance. We apply photoluminescence, electroluminescence, and dark lock-in thermography imaging techniques to evaluate new modules in their initial state and after applying stresses of damp heat, light-induced-degradation regeneration parameters, thermal cycling, and humidity-freeze cycles. One module uses emitter-wrap-through cells with back contacts connected to a metal-foil backplane, and the other is composed of half-cut cells. Imaging shows examples on non-uniform degradation and damage such as cells that degrade and recover under the applied conditions, cells with cracks and handling damage, and cells with increasing series resistance.

degradation↗

DOE OSTI2023

Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a rate at which recycling is becoming necessary. A novel module architecture has been demonstrated that has potential for high value recycling for c-Si PV. This architecture eliminates the vacuum lamination process and cross-linked en capsulants. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with NREL. These modules are being tested against traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while retaining module performance.

computer architecture↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

capacitance↗

DOE OSTI2023

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗

DOE OSTI2022

Stability of Silicon Heterojunction Solar Cells Having Hydrogen Plasma Treated Intrinsic Layer

The open-circuit voltage of Silicon Heterojunction (HJ) cells can be improved by using extrinsic hydrogen plasma treatment (HPT) to reduce the trap states (NT) which we have verified using Deep Level Transient Spectroscopy (DLTS). However, hydrogen has been associated with long-term degradation. We have investigated the stability of HJ cells with and without HPT using accelerated degradation (1-sun illumination, 90 degrees C temperature, argon ambient for 1000 hours). The stability has been studied using DLTS, current-voltage, and Suns-Voc. Our results show HPT cells are stable and maintain their higher Voc and lower NT after accelerated degradation.

degradation↗

DOE OSTI2022

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗