Water contamination in thermal oxide on silicon
Water contaminating effects on thin thermal oxide passivated silicon planar devices
Engineering topics
Publications and source records attributed to Kuper, A. B..
Water contaminating effects on thin thermal oxide passivated silicon planar devices
Storage device is applicable in memory systems and in high-resolution arrays for light-responsive image sensing. The device offers high yield in multiple arrays and allows charge release with light striking only the edge of a metal electrode.
Water film conductance feasibility studies for use in semiconductor device pre-screening
Water contamination in thermal oxide on silicon
Oxide impurity effects causing potential shifts in Si covered by thick oxide layer studied with metal-oxide-Si electrical measurement and radiochemical analysis
Impurities and interface states in silicon surface and oxide systems
Impurities and interface states in silicon dioxide-silicon system
Silicon oxide-silicon interface states at 77 degrees K
Impurities and interface states in silicon dioxide/silicon system
Metal-oxide-silicon capacitor and radiochemical analyses of anion in sodium contamination failure mode