The Certification of Standard Reference Material 1979: Powder Diffraction Line Profile Standard for Crystallite Size Analysis
Abstract not provided
Engineering topics
Publications and source records attributed to Mendenhall, Marcus H..
Abstract not provided
The CREME96 model has been available on the WWW for more than 10 years now. While principally for the estimation of radiation effects on spacecraft electronics, it contains space radiation environment models that have been used for instrument design calculations, estimation of instrumental background, estimation of radiation hazards and many other purposes. Because of the evolution of electronic part design we have found it necessary to revise CREME96, creating CREME-MC. As part of this revision, we are revising and extending the environmental models in CREME96. This talk will describe the revised radiation environment models that are being made available in CREME-MC
Use of low-energy protons and high-energy light ions is becoming necessary to investigate current-generation SEU thresholds. Systematic errors can dominate measurements made with low-energy protons. Range and energy straggling contribute to systematic error. Low-energy proton testing is not a step-and-repeat process. Low-energy protons and high-energy light ions can be used to measure SEU cross section of single sensitive features; important for simulation.
Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.
The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
The exposure of 108 glass samples and 12 glass-ceramic samples to Earth-orbit environments permitted measurements which establish the effects of each environment. Examination of five glass types and one glass ceramic located on both the Earth-facing side and the trailing edge revealed no reduction in strength within experimental limits. Strength measurements subjected less than 5 percent of the sample surface area to stresses above 90 percent of the glass's failure strength. Seven micrometeorite or space debris impacts occurred on trailing edge samples. One of those impacts occurred in a location which was subjected to 50 percent of the applied stress at failure. Micrometeorite or space debris impacts were not observed on Earth-facing samples. The physical shape and structure of the impact sites were carefully examined using stereographic scanning electron microscopy. These impacts induce a stress concentration at the damaged region which influences mechanical strength. The flaw size produced by such damage was examined to determine the magnitude of strength degradation in micrometeorite or space-debris impacted glasses. Scanning electron microscopy revealed topographical details of impact sites which included central melt zones and glass fiber production. The overall crater structure is similar to much larger impacts of large meteorite on the Moon in that the melt crater is surrounded by shocked regions of material which fracture zones and spall areas. Residual stresses arising from shock compression and cooling of the fused zone cannot currently be included in fracture mechanics analyses based on simple flaw size examination.
Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.