NASA NTRS · 20080034465
Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs
Abstract
Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
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Tipton, Alan D., Pellish, Jonathan A., Hutson, John M., Baumann, Robert, Deng, Xiaowei, Marshall, Andrew, Xapsos, Michael A., Kim, Hak S., Friendlich, Mark R., Campola, Michael J., Seidleck, Christina M., LaBel, Ken A., Mendenhall, Marcus H., Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A.. 2008-01-01. Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs. https://ntrs.nasa.gov/citations/20080034465
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