Search NASA⌕ Search

Engineering topics

Marshall, Andrew

Publications and source records attributed to Marshall, Andrew.

A Gaussian process autoregressive model capturing microstructure evolution paths in a Ni–Mo–Nb alloy

Additive manufacturing is increasingly being employed to produce components of complex geometries in structural alloys because of the expected energy savings associated with the near-net-shape capability and the ability to build in novel internal features that are not possible with many conventional manufacturing approaches. However, because of the extreme thermal conditions encountered, the non-equilibrium microstructures produced during powder bed-based additive manufacturing processes must be subjected to custom post-heat treatment processes to recover the target mechanical properties. Phase-field models and simulation techniques have matured to a state where the microstructure evolution paths, and the morphologies of the resulting precipitate phases can be predicted reasonably accurately, considering alloy-specific thermodynamic and kinetic aspects of the nucleation and growth processes. However, phase-field simulations are computationally intensive, which precludes the ability to apply the simulations directly to the length scale of the entire component. Therefore, it is highly desirable to develop low-computational-cost surrogate models that effectively capture the physics at the microstructural length scale, while facilitating the design of optimized processing conditions resulting in location-specific targeted microstructures at the component scale. The work presented here demonstrates the application of the materials knowledge system framework to develop a surrogate model that effectively captures the microstructural path during annealing of a Ni–Mo–Nb alloy containing different Mo and Nb compositions known to segregate during solidification under additive manufacturing conditions. Specifically, the surrogate model built in this work is based on a Gaussian process autoregressive model informed by statistical representation of simulated microstructures using two-point correlations and dimensionality reduction through principal component analysis. In conclusion, this surrogate model is shown to capture the bifurcation of the microstructural path during precipitation, which yields a microstructure dominated by the $\gamma^{\prime\prime}$ phase at high Nb concentrations and the $\delta$ phase at low Nb concentrations.

36 MATERIALS SCIENCE↗

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

Pellish, Jonathan A.↗

Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs

Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.

Tipton, Alan D.↗