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Schrimpf, Ronald D.

Publications and source records attributed to Schrimpf, Ronald D..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/ f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Here our results show that DLTS and 1/ f noise measurements can provide complementary information about defects in linear bipolar devices.

42 ENGINEERING↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗
NASA NTRS2016

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

modeling↗
NASA NTRS2009

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.↗
NASA NTRS2009

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

Pellish, Jonathan A.↗
NASA NTRS2008

Device-Orientation Effects on Multiple-Bit Upset in 65-nm SRAMs

Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.

Tipton, Alan D.↗
NASA NTRS2007

Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

Howe, Christina L.↗