Engineering topics
Publications and source records attributed to Seidleck, Christina M..
We present the challenges that arise when using redundant clock domains due to their time-skew. Radiation data show that a singular clock domain provides an improved triple modular redundant (TMR) scheme over redundant clocks.
We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.
A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.
A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.
Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.