Engineering topics

Mitra, Suchismita

Publications and source records attributed to Mitra, Suchismita.

9 records

DOE OSTI2024

Exploring the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

In this work, we present the performance and reliability of a fire-through copper (Cu) paste which has been screen printed on c-Si solar cell with passivated emitter rear contact (PERC). The Cu paste is fired through silicon nitride (SiN) anti-reflection coating at a peak temperature of 630 degrees C . SEM images of the Cu paste show a Cu core with ~200 nm oxide shell around the particles. This conductive oxide layer acts as a diffusion barrier between Cu and Si and prevents the degradation of cell performance during accelerated aging conditions. An efficiency of 19.250% has been achieved with Voc=654mV,FF= 76.68%, Jsc=38.40 m.A/cm 2 for champion PERC cells. Accelerated testing of the PERC mini-modules in damp heat chamber with 85 degrees C and 85% humidity have demonstrated that the devices are operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper↗

DOE OSTI2024

Evaluating the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

A bifacial silicon heterojunction solar cell demands approximately 210 mg usage of silver paste (9 busbars, 24.5%, bifacial, M6 size wafer). Copper is an excellent alternative to silver: 100x cheaper, similar elecvtrical resistivities, and 1000x more abundant. Successful demonstration of large area selective emitter PERC solar cells using Cu fire-through paste with FF approximately 75% and approximately 19%. Paste chemistry results in oxide-based Cu diffusion barrier, leading to good reliability of the devices: 1000h DHT giving a 3.5% efficiency drop. The additional series resistance still needs to be lowered. Printed and fired cell performance is governed mostly by pFF, especially J02 ; same for DHT degradation. Further improvement in printing and firing optimization for lower series resistance and higher FF.

Ag↗

DOE OSTI2024

Exploring the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include 1) bulk Cu has a similar conductivity to Ag (1.7 mu O-cm for Cu, 1.6 mu O-cm for Ag) and 2) Cu is approximately 100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper (Cu) contacts include 1) easy oxidation and 2) diffusion into the Si cell and recombination activity.

copper paste↗

DOE OSTI2024

Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells

We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cells due to its fire-through nature. Champion PERC cells have achieved ....efficiency with ...parameters . Accelerated testing to investigate reliability performance of the SE- PERC mini-modules were carried out in damp heat chamber with 85oC and 85% humidity. The devices were found to be operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper paste↗

DOE OSTI2024

Investigation of Local Parameters of PERC Solar Cells Metallized with Screen Printed Cu-Paste

For 40 TW of PV required to transition our planet to 100% renewables, the silver (Ag) should disappear from PV production. Advantages of copper (Cu) over silver (Ag) include: 1) bulk Cu has a similar conductivity to Ag (1.7 one millionth O-cm for Cu, 1.6 one millionth O-cm for Ag, and 2) Cu is -100 times cheaper than Ag, making it an excellent potential replacement. Problems associated with copper contacts include: 1) easy oxidation, and 2) diffusion into the Si cell and recombination activity. To summarize: 1) Rs map shows some regions with very high Rs, indicating no contact in those areas; 2) the histogram shows the peak Rs -5 ohm.cm2, which explains the high FF loss due to Rs; and 3) DLIT indicates non-uniformity in J01 and J02.

copper↗

DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗

DOE OSTI2023

Understanding Hydrogen Passivation Mechanism in Poly-Si Passivating Contacts: Insights from Effusion Studies

Silicon PV is the dominant PV technology, and captures >95% world market share, supporting -100 GW/year. Diffused and passivated pn junctions along with other rear side passivation technologies are the mainstream technologies and will continue to remain so in the coming decades. Passivated contacts, using tunnel oxide passivation stacks at the rear side, will gain market share from about 10% in 2022 up to 58% within the next 10 years. Most mature approaches use passivating layers of hydrogenated Al2O3 and SiNx. LPCVD SiNx provides less hydrogen for passivation compared to PECVD SiNx but can retain the hydrogen up to higher temperatures which is beneficial for firing. Although SiNx provides large amount of hydrogen, this doesn't necessarily translate to good passivation. AlOx:H contributes to retaining H at higher temperatures. Water molecules are also detected during H-effusion and may play a role in passivation of the oxide/wafer interface.

effusion study↗

DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV VocSi Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the performance analysis of a 22.5% efficient polysilicon on silicon oxide (poly-Si/SiOx) passivated contact solar cells with deliberately introduced pinholes using metal-assisted chemical etching (MACE) has been performed with the help of optical analysis using Sunsolve and electrical analysis using Quokka3. The power loss is maximum due to recombination and resistive losses in the bulk (~0.76 mW/cm2 ) followed by power loss due to rear contact recombination (~0.35 mW/cm2 ). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and efficiency has been investigated.

MACE↗

DOE OSTI2023

Mechanism of Hydrogen Passivation in Passivated Contact Si Solar Cells

In this abstract, we discuss the mechanism of hydrogen passivation on symmetrical n-Si/ultra-thin SiO2/polySi structures. The hydrogen was introduced from different hydrogen-containing dielectric layers (AlOx:H and SiNx:H and their stacks), as well as by forming gas anneal (FGA). The effusion of hydrogen both from the dielectric layers and in the underlying poly-Si was explored using a quadrupole mass spectrometer (QMS) and FTIR spectroscopy. We show that the strength of hydrogen bonds depend on the deposition technique as well as hydrogenation mechanism. While a PECVD SiNx:H loses hydrogen at a peak temperature of ~450 degrees C, LPCVD SiNx:H, although having less hydrogen compared to PECVD, effuses at a peak temperature of ~850 degrees C. This becomes important to maintain passivation of passivated contacts after firing of metal contacts at high temperatures. On the other hand, it has been observed that SiNx:H provides larger amount of hydrogen to poly-Si after FGA compared to FGA treated AlOx:H, which acts as a capping layer and helps in retaining the hydrogen up to higher temperatures.

hydrogen bonding configuration↗