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Mounce, Andrew

Publications and source records attributed to Mounce, Andrew.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Single Photon Emitters Coupled to Photonic Wire bonds

This project will test the coupling of light emitted from silicon vacancy and nitrogen vacancy defects in diamond into additively manufactured photonic wire bonds toward integration into an "on-chip quantum photonics platform". These defects offer a room-temperature solid state solution for quantum information technologies but suffer from issues such as low activation rate and variable local environments. Photonic wire bonding will allow entanglement of pre-selected solid-state defects alleviating some of these issues and enable simplified integration with other photonic devices. These developments could prove to be key technologies to realize quantum secured networks for national security applications.

42 ENGINEERING↗
DOE OSTI2021

Quantum Sensed Electron Spin Resonance Discovery Platform (Final Report)

The properties of materials can change dramatically at the nanoscale new and useful properties can emerge. An example is found in the paramagnetism in iron oxide magnetic nanoparticles. Using magnetically sensitive nitrogen-vacancy centers in diamond, we developed a platform to study electron spin resonance of nanoscale materials. To implement the platform, diamond substrates were prepared with nitrogen vacancy centers near the surface. Nanoparticles were placed on the surface using a drop casting technique. Using optical and microwave pulsing techniques, we demonstrated T1 relaxometry and double electron-electron resonance techniques for measuring the local electron spin resonance. The diamond NV platform developed in this project provides a combination of good magnetic field sensitivity and high spatial resolution and will be used for future investigations of nanomaterials and quantum materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Image Processing Algorithms for Tuning Quantum Devices and Nitrogen-Vacancy Imaging

Semiconductor quantum dot devices can be challenging to configure into a regime where they are suitable for qubit operation. This challenge arises from variations in gate control of quantum dot electron occupation and tunnel coupling between quantum dots on a single device or across several devices. Furthermore, a single control gate usually has capacitive coupling to multiple quantum dots and tunnel barriers between dots. If the device operator, be it human or machine, has quantitative knowledge of how gates control the electrostatic and dynamic properties of multiqubit devices, the operator can more quickly and easily navigate the multidimensional gate space to find a qubit operating regime. We have developed and applied image analysis techniques to quantitatively detect where charge offsets from different quantum dots intersect, so called anticrossings. In this document we outline the details of our algorithm for detecting single anticrossings, which has been used to fine-tune the inter-dot tunnel rates for a three quantum dot system. Additionally, we show that our algorithm can detect multiple anticrossings in the same dataset, which can aid in the coarse tuning the electron occupation of multiple quantum dots. We also include an application of cross correlation to the imaging of magnetic fields using nitrogen vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗