Engineering topics
Publications and source records attributed to Mounce, Andrew.
We report the coupling of tin-vacancy centers (SnV-) to 1D photonic crystal cavities in diamond thin-films; we observe a quality factor of ~6000 and a 10-fold PL enhancement.
We couple tin-vacancy (SnV-) centers in thin-film diamond to one-dimensional photonic crystal cavities of different orientations and develop a spontaneous emission model that rigorously quantifies Purcell factors and the branching ratio of the zero-phonon line (ZPL) transitions.
this is a poster that covers a recent publication that was passed through IR - should look familiar to the DC.
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Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.
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UUR poster on CINT user work that summarizes a previously released paper
Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski–Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. Here, we present a potential solution by embedding isolated LDE GaAs QDs within an Al 0.4 Ga 0.6 As Huygens’ metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position- and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens’ metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.
SAND2024-13867O pyscan-tlk software provides straight-forward access to control Thorlabs brand instruments with python. C bindings and python wrappers are generated and automatically based on text parsing the C documentation. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic structure and employ an atomistic multi-valley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of ~50% owing to alloy disorder and (2) roughness-induced double-dot detuning bias energy variability of order 1–10 meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder. Our approach yields atomic structure spanning orders of magnitude larger areas than post-growth microscopy or tomography alone, enabling more holistic predictions of disorder-induced qubit variability.
A physically unclonable function (PUF) and a method of reading it are provided. The PUF is constituted by a microfabricated array of randomly polarized micromagnets disposed on a substrate. The PUF can be read by creating a magnetization map of the PUF from the signal output of a quantum diamond microscope (QDM) and converting the magnetization map to a numerical sequence.
SAND2024-08598O The Quantum Instrumentation Control Kit Defect Arbitrary Waveform Generator (QICKDAWG) characterizes nitrogen-vacancy centers in diamond and other defects. It does this by using a radio frequency system-on-a-chip (RFSoC) field programmable gate array (FPGA). QICKDAWG synthesizes microwave pulses from the RFSoC to change the spin state of the defects. The software also allows for laser control using the RFSoC, which optically pumps defects. Ultimately, QICKDAWG supports the implementation of RFSoC FPGAs in defect characterization. This replaces the slow, expensive, traditional hardware, thus lowering the cost and time for defect characterization. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
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