Evaluating Elevated Temperature DRAM Stuck Bit Sensitivity at Room Temperature
UNKNOWN
Sheldon, Douglas J.↗
Engineering topics
Nguyen, Duc N.
Publications and source records attributed to Nguyen, Duc N..
Non Volatile Flash Memory Radiation Tests
Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.
single event upset results↗
Radiation Tests of Highly scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories--Update 2011
High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) 32Gb and multi-level cell (MLC) 64Gb NAND flash memories manufactured by Micron Technology.
Heavy ion↗
Investigation of High Current Events in Highly Scaled NAND Flash Memories
No abstract available
Irom, Farokh↗
Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2010
High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories manufactured by Micron Technology.
Irom, Farokh↗
Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.
nonvolatile memory↗
Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.
Nguyen, Duc N.↗
Radiation Tests on 2Gb NAND Flash Memories
We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures.
NAND circuits↗
Dynamic SDRAM SEFI Detection and Recovery Test Results
Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm(exp 2)/mg and the saturated cross section is 6 x 10(exp -5)cm(exp 2). Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.
radiation effects↗
A chip and pixel qualification methodology on imaging sensors
This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor's overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity.
Novak, Frank↗
A Chip and Pixel Qualification Methodology on Imaging Sensors
This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.
Chen, Yuan↗
TID, SEE and radiation induced failures in advanced flash memories
We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.
Scheick, Leif Z.↗