Engineering topics
Publications and source records attributed to Patterson, Jeffrey D..
Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.
Single event functionality interrupt (SEFI) results are presented for Hynix SDRAMS. The SEFI response threshold is below LET 9.9 Mev-cm(exp 2)/mg and the saturated cross section is 6 x 10(exp -5)cm(exp 2). Dynamic SEFI identification was made, and in-situ recovery restored functionality. Verification results of the identification algorithm are presented. An observed high current radiation response is also presented.
This paper briefly reviews the three basic radiation effect mechanisms, and how they interrupt the functionality of currently available non-volatile memory technologies. This paper also presents a very general overview of the radiation environments expected in future space exploration missions. Unfortunately, these environments will be very harsh, from a radiation standpoint, and thus a significant effort is required to develop non-volatile technologies that will meet future mission requirements.