Thick film silicon growth techniques

Abstract

Silicon ribbon growth experiments were conducted using orifices (dies) fabricated from SiC-SiO2 mixtures, fused quartz, SiC, and fine-grained, high density graphite. The best results were obtained from graphite dies. A number of different approaches was tried in modifying the thermal gradient in the dies and in holding the dies. The best results here were obtained from a 0.25-in. thick Mo disc holding a graphite die directly and fitting the die quite closely. Ribbon growths as wide as 9 mm were obtained, while the longest ribbon was 450 x 3.5 x 0.5 mm. Resistivities of ribbons grown from graphite dies have been measured over the range of 0.03 to 1.6 ohm-cm. Some thoughts and literature findings are presented regarding refractory oxide materials as potential orifices.