NASA NTRS · 19740000234
A method for polycrystalline silicon delineation applicable to a double-diffused MOS transistor
Abstract
Method is simple and eliminates requirement for unreliable special etchants. Structure is graded in resistivity to prevent punch-through and has very narrow channel length to increase frequency response. Contacts are on top to permit planar integrated circuit structure. Polycrystalline shield will prevent creation of inversion layer in isolated region.
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Halsor, J. L., Lin, H. C.. 1974-12-01. A method for polycrystalline silicon delineation applicable to a double-diffused MOS transistor. https://ntrs.nasa.gov/citations/19740000234
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