Improved fabrication techniques for infrared bolometers

Abstract

Ion implantation and sputter metallization are used to produce ohmic electrical contacts to Ge:Ga chips. The method is shown to give a high yield of small monolithic bolometers with very little low-frequency noise. It is noted that when one of the chips is used as the thermometric element of a composite bolometer it must be bonded to a dielectric substrate. The thermal resistance of the conventional epoxy bond is measured and found to be undesirably large. A procedure for soldering the chip to a metallized portion of the substrate in such a way as to reduce this resistance is outlined. An evaluation is made of the contribution of the metal film absorber to the heat capacity of a composite bolometer. It is found that the heat capacity of a NiCr absorber at 1.3 K can dominate the bolometer performance. A Bi absorber possesses significantly lower heat capacity. A low-temperature blackbody calibrator is built to measure the optical responsivity of bolometers. A composite bolometer system with a throughput of approximately 0.1 sr sq cm is constructed using the new techniques. The noise in this bolometer is white above 2.5 Hz and is slightly below the value predicted by thermodynamic equilibrium theory.