Temperature control in wafer-level testing of large multi-segment electromigration test structures

Abstract

The paper describes two methods for maintaining a constant metallization temperature throughout a wafer-level isothermal electromigration test of large multisegment test structures where Joule-heating is high and chip to chuck thermal contact is poor. In the first method, an initial calibration of Joule heating versus metal temperature is carried out. During the isothermal electromigration test, the Joule heating is continuously monitored and the chuck temperature is adjusted based on the calibration results to maintain a constant metal temperature. In the second method, temperature sensors are fabricated on the chip and then the sensors are used to monitor the chip temperature directly. The chuck temperature is then adjusted as needed.