Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

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Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

Tauke-Pedretti, Anna·Nielson, Gregory N·Cederberg, Jeffrey G·Cruz-Campa, Jose Luis

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Abstract

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

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14 SOLAR ENERGY 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION 36 MATERIALS SCIENCE

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Tauke-Pedretti, Anna, Nielson, Gregory N, Cederberg, Jeffrey G, Cruz-Campa, Jose Luis. 2015-05-12. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction. https://www.osti.gov/biblio/1179228

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