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DOE OSTI · 1182478

Conduction at a ferroelectric interface

Marshall, Matthew S. J.·Malashevich, Andrei·Disa, Ankit S.·Han, Myung -Geun·Chen, Hanghui·Zhu, Yimei·Ismail-Beigi, Sohrab·Walker, Frederick J.·Ahn, Charles H.
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Abstract

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

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Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., Ahn, Charles H.. 2014-11-05. Conduction at a ferroelectric interface. https://doi.org/10.1103/physrevapplied.2.051001

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