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DOE OSTI · 1706719

Sulfurization as a promising surface passivation approach for both n- and p-type Si

Das, Ujjwal·Theisen, Robert·Hanket, Greg·Upadhyaya, Ajay·Rohatgi, Ajeet·Hua, Amandee·Weinhardt, Lothar·Hauschild, Dirk·Heske, Clemens
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Abstract

Sulfur is shown to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25 ms are achieved for n- and p-type Si wafers, respectively, comparable to the industry standard thermal oxide and atomic layer deposited aluminum oxide passivation level. Surface characterization by x-ray photoelectron and emission spectroscopy reveals that sulfur is primarily bonded in a sulfide environment.

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42 ENGINEERINGSi surface passivationsulfurx-ray emission spectroscopyx-ray photoelectron spectroscopy

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Das, Ujjwal, Theisen, Robert, Hanket, Greg, Upadhyaya, Ajay, Rohatgi, Ajeet, Hua, Amandee, Weinhardt, Lothar, Hauschild, Dirk, Heske, Clemens. 2020-01-01. Sulfurization as a promising surface passivation approach for both n- and p-type Si. https://doi.org/10.1109/pvsc45281.2020.9300395

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