Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 2d Raw Data

Abstract

After 10 hrs of chronoamperometry (CA) photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples using a commercial AFM system (Bruker Dimension Icon). PeakForce TUNA mode was used to acquire the morphology and current simultaneously. A PtIr conductive probe with spring constant of 2.8 Nm-1 was used for the scanning. A white light source was used to illuminate the surface during the acquisition. Line scan extracting the topography and photocurrent from this 10 hour CA tested Si/GaN sample. The topography mapping is 2 × 2 µm2. No sample bias was applied and this photoconductive AFM measurement was performed under white light front illumination with an angle.