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DOE OSTI · 1800588

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

Yin, Xin·Wang, Yizhan·Chang, Tzu‐hsuan·Zhang, Pei·Li, Jun·Xue, Panpan·Long, Yin·Shohet, J. Leon·Voyles, Paul M.·Ma, Zhenqiang·Wang, Xudong
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Abstract

The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few-nanometer amorphous Al 2 O 3 layers onto atomically thin single-crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al 2 O 3 facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high-resistance state follows Poole–Frenkel emission, and in the the low-resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low-resistance state is estimated to be ≈2400 cm 2 V -1 s -1 , which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high-performance memristor devices.

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2D heterostructures36 MATERIALS SCIENCEatomic layer depositionmemristorsoxygen vacancieszinc oxide

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Yin, Xin, Wang, Yizhan, Chang, Tzu‐hsuan, Zhang, Pei, Li, Jun, Xue, Panpan, Long, Yin, Shohet, J. Leon, Voyles, Paul M., Ma, Zhenqiang, Wang, Xudong. 2020-04-21. Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure. https://doi.org/10.1002/adma.202000801

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