Templated Liquid-Phase Epitaxy of InP Structures on Si

Schneble, Olivia D. (ORCID:0000000220891600); Neumann, Anica N.; Mangum, John S. (ORCID:0000000259267565); Warren, Emily L. (ORCID:0000000185687881); Zimmerman, Jeramy D.

doi:10.1364/pvled.2021.pvw1e.5

DOE OSTI · 1860482

Templated Liquid-Phase Epitaxy of InP Structures on Si

Schneble, Olivia D. (ORCID:0000000220891600)·Neumann, Anica N.·Mangum, John S. (ORCID:0000000259267565)·Warren, Emily L. (ORCID:0000000185687881)·Zimmerman, Jeramy D.

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Abstract

We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

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CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY,MATERIALS SCIENCE III-V optoelectronics photonics semiconductor

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Schneble, Olivia D. (ORCID:0000000220891600), Neumann, Anica N., Mangum, John S. (ORCID:0000000259267565), Warren, Emily L. (ORCID:0000000185687881), Zimmerman, Jeramy D.. 2021-07-29. Templated Liquid-Phase Epitaxy of InP Structures on Si. https://doi.org/10.1364/pvled.2021.pvw1e.5

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