DOE OSTI · 1891743
Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.
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Moxim, Stephen J., Sharov, Fedor V., Hughart, David, Haase, Gad, Lenahan, Patrick M.. 2021-10-01. Initial Stages of Time-Dependent Dielectric Breakdown: Atomic Scale Defects Generated by High-Field Gate Stressing in Si/SiO2 Transistors.. https://doi.org/10.2172/1891743
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