Advanced silicon tracking detector developments for the future Electron-Ion Collider

Abstract

The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.