Self-Assembled Monolayer Patterning for PolySi/SiO2 Passivated Contacts

Nemeth, Bill; Young, David L.; Page, Matthew R.; LaSalvia, Vincenzo; Theingi, San; Stradins, Pauls

doi:10.1109/pvsc48320.2023.10359621

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DOE OSTI · 2309710

Self-Assembled Monolayer Patterning for PolySi/SiO2 Passivated Contacts

Nemeth, Bill·Young, David L.·Page, Matthew R.·LaSalvia, Vincenzo·Theingi, San·Stradins, Pauls

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Abstract

We utilize hexamethyldisilazane (HMDS) based self assembled monolayers to pattern polysilicon (polySi) passivated contacts. We find process conditions that allow for etching front side n/polySi between fingers; thereby increasing Jsc. Importantly, the Voc does not degrade indicating the additional process steps do not introduce defects or impurities. HMDS layers remain on the surface for metallization without detriment to transport.

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Nemeth, Bill, Young, David L., Page, Matthew R., LaSalvia, Vincenzo, Theingi, San, Stradins, Pauls. 2023-12-25. Self-Assembled Monolayer Patterning for PolySi/SiO2 Passivated Contacts. https://doi.org/10.1109/pvsc48320.2023.10359621

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