DOE OSTI · 3013864
DEVELOPMENT AND APPLICATION OF DEEP-LEVEL SPECTROSCOPY SYSTEMS FOR CHARACTERIZING IRRADIATION-INDUCED TRAPS IN GALLIUM NITRIDE SCHOTTKY DIODES
Abstract
This thesis documents the creation of a Deep Level Optical Spectroscopy System, Irradiation performed at the IBL and results from this experiment from University of New Mexico fabricated devices.
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Hodgson, Donald Edwin [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000546967414). 2025-12-01. DEVELOPMENT AND APPLICATION OF DEEP-LEVEL SPECTROSCOPY SYSTEMS FOR CHARACTERIZING IRRADIATION-INDUCED TRAPS IN GALLIUM NITRIDE SCHOTTKY DIODES. https://www.osti.gov/biblio/3013864
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