DOE OSTI · 3027437
Total Ionizing Dose Effects on Gallium Oxide MOSFETs
Abstract
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
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Cadena, Rick [Vanderbilt University], Smith, Michael Brandon [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000186229284), Wilcox, Ian Zachary [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000764290181), Charnas, Adam R. [AFRL], Gorsak, Cameron [AFRL], Nair, Hari [AFRL], Green, Andrew [Air Force Research Laboratory], Neal, Adam [AFRL], Ball, Dennis [Vanderbilt University], Witulski, Arthur F. [External Affiliation], Schrimpf, Ronald [Vanderbilt University]. 2025-04-01. Total Ionizing Dose Effects on Gallium Oxide MOSFETs. https://doi.org/10.2172/3027437
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