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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10

Ultra-stable trimetallic phosphide heterostructure with regulated electronic structure for overall water splitting at high current densities

Developing ultra-stable electrocatalysts for highly efficient overall water splitting at high current density (HCD) is critical for renewable hydrogen/oxygen production in the industry. However, the most active electrocatalysts for large current-driven water splitting are seriously handicapped by insufficient electrical contact kinetics due to the intensive bubble overflow. Herein, we demonstrate the ultra-stable trimetallic phosphides of NiFeP/NiCoP catalysts on a hydrophilic Ni foam skeleton via a corrosion-hydrothermal-phosphating strategy. The optimized NiFeP/NiCoP catalyst stabilizes for 600 h at -1 A cm -2 for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in alkaline solution, and it only needs low overpotentials of 237 and 314 mV to drive HER and OER at 1 A cm -2 , respectively. As expected, the optimized NiFeP/NiCoP electrode maintains 1000 h at 0.5 A cm -2 for water splitting, ranking among the top performers among reported catalysts. Such excellent performance could be attributed to the fast electron transfer for electrochemical reactions, the electron-deficient Fe/Ni sites contribute to forming robust metal oxyhydroxide during OER, and electron-rich Co sites facilitate H adsorption during HER. In conclusion, the findings present a highly promising candidate for ultra-stable non-noble metal electrocatalysts, offering a viable option for hydrogen/oxygen supply for fuel cells and metal-air batteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimizing Porous Transport Layer Porosity for Proton Exchange Membrane Water Electrolysis

An empirical model is presented that describes anode-side losses related to porous transport layer (PTL) morphology in proton exchange membrane water electrolysis (PEMWE). The model is based on an advanced voltage breakdown analysis that links various overpotentials to PTL morphology. Custom Ti PTLs, spanning uncommonly low porosities (22 - 31%), were fabricated and analyzed with X-ray CT to obtain pore and particle size distributions. Particle size distributions were consistent across samples with an average particle diameter of 12.0?..mu..m, whereas average pore diameters ranged from 6.0 to 7.0?..mu..m. The PTLs were tested in standard PEMWE cell assemblies with anode catalyst loadings of 0.1 mgIr cm-2 to obtain polarization curves, electrochemical impedance spectra, and augmented Tafel analysis. The PTL-dependent anode side losses were deconvoluted and assigned to excess utilization, concentration, ion transport resistance, and electrical contact resistance overpotentials. The data and model reveal an optimal 20 - 28% PTL porosity region where utilization and contact resistance overpotentials are minimized without triggering concentration and ion transport losses related to water deprivation. The optimal PTL porosity depends on the operating current density and is demonstrated at realistic PEMWE water flow rates to establish PTL design guidance for operation at scale.

08 HYDROGEN↗

Assessment of dissimilar metal corrosion in molten chloride salt

Dissimilar metal corrosion between high nickel alloys and stainless steel was tested in purified molten chloride salt. Preliminary results have shown that corrosion rates are significantly affected for samples both when electrically connected and isolated. Suggesting that galvanic corrosion as well as non-galvanic dissimilar metal corrosion play a role in corrosion processes for multi component systems. Finally, these results suggest that even if efforts to prevent electrical contact are taken, close proximity of structural materials can still change corrosion rates in molten salt environments.

14 SOLAR ENERGY↗

High-throughput multimodal exploration of a nanocrystalline Cu-Ag library

Sputter-deposited, nanocrystalline Cu-Ag thin films produced across a broad compositional and deposition-parameter space were evaluated to unravel the process-structure-property relationships important for creating hard, conductive electrical contacts and coatings. Combinatorial deposition involving pulsed direct current magnetron sputtering of elemental targets enabled swift examination of nearly the full range of alloy compositions and a relevant portion of deposition atomistics. Several high-throughput characterization modalities were employed to evaluate the chemistry, structure, and properties of the films. The resultant hardness, modulus, film density, crystal texture, and resistivity were analyzed in terms of key deposition characteristics (incident atom kinetic energy and incidence angle) predicted by binary-collision, kinematic Monte Carlo simulations. The study revealed improved hardness, parabolic resistivity dependence on composition, and compositional and process dependencies of film tarnishing. The results are discussed in the context of variations in microstructure and film density. Transmission electron microscopy and X-ray diffraction demonstrate several forms of compositional variation including solute segregation to grain boundaries as well as periodic, intragranular compositional modulations. Annealing of a Cu-rich alloy film exhibiting grain boundary segregation showed that this as-deposited, compositional variation is not stable above 100 °C. Finally, the Cu-Ag system is shown to have potential for hard, conductive, tarnish-resistant and room temperature-stable nanocrystalline thin films across the composition space.

36 MATERIALS SCIENCE↗

Shape Anisotropy-Dependent Leaking in Magnetic Neurons for Bio-Mimetic Neuromorphic Computing

Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes. Here, in this work, we study DW-MTJ artificial neurons capable of leaky integrate-and-fire (LIF) behavior and demonstrate geometry-dependent leaking dynamics that results in repeatable, tunable LIF operation. Studying the behavior of five different device designs, we show tuning the geometry, stimulating fields and currents, and location of electrical contacts results in a wide range of neuron behavior. Additionally, implementation of an asymmetric notch allows for nonlinear pinning which increased expressivity without sacrificing leaking. The measured behavior is implemented in a simulated spiking neural network that outperforms a 1D model of continuous DW motion and approaches the performance of an ideal LIF activation function. The results show that the analog LIF capability of DW-MTJ neurons combines many desirable neuron functions into a single device, which can result in varied forms of multifunctional neuromorphic computing.

42 ENGINEERING↗

Optical contrast analysis of α -RuCl 3 nanoflakes on oxidized silicon wafers

α-RuCl 3 , a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl 3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl 3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl 3 nanoflakes with thicknesses below 100 nm on SiO 2 /Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl 3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of –0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl 3 thickness.

2D materials↗

TTW (Transition to Wire Device) [SWR-25-02]

The Transition to Wire (TTW) hardware project is a method for connecting solar research samples with fragile interconnects to robust, weatherproof and consistent commercial connectors. The Transition to Wire device is a printed circuit board designed to facilitate the transition from tab ribbon or other unsecured electrical contacts on research samples to either wires or a connector. The four pin connector provides a kelvin (4 wire) connection at the solder pad where the sample connects.

McDanold, Byron↗

Wafer-Free Crystalline Silicon Solar Cells (CRADA Final Report)

This CRADA project, based on the DOE Solar Energy Technologies Office (SETO) Solar Prize Voucher program, helped Leap Photovoltaics to develop methodologies to immobilize Si particles by permanently attaching them to an Al-coated substrate and thereby forming carrier-selective electrical contacts to the Si particles. The bigger goal was to help Leap Photovoltaics develop these immobilized and contacted particle arrays into relatively efficient, inexpensive, and industrially relevant solar cells. By using Si particles instead of wafers in a solar cell absorber layer, one can avoid costs associated with growing monocrystalline Si ingots, then diamond-sawing them into wafers, then processing wafers into cells – a mainstream practice in today's high-efficiency Si cell and module technology. Monocrystalline or polycrystalline Si particles can be obtained in various ways: for example, Si kerf from wafer sawing is monocrystalline; recycled Si cell wafers can be ball-milled into particles; particles can be grown using various gas-phase techniques (mostly from SiH4). These Si particles can be assembled onto a substrate and serve as an absorber layer for the solar cell, absorbing photons to generate photocarriers. The challenge with this technique is to collect photocarriers from individual Si particles, with separation of photogenerated electrons to the negative cell’s electrode and positive photogenerated holes to the positive electrode. Therefore, each particle must have two isolated, carrier-selective contacts: one for electrons and one for holes. Plus, particles need to be immobilized onto a solid substrate. The goal of this work was focused on the immobilization of Si particles and creating hole-selective contact to them at the same time, using industrially relevant Si photovoltaic (PV) cell technology: screen printing of Al back-surface field electrodes. This is used in the mainstream Propane Education and Research Council (PERC) technology for hole-collecting contacts at the back of the cell. The work performed at NREL consisted of screen printing of Al metal paste on substrates, spreading Si particles onto it, and thermally processing the structures to form hole-collecting contacts. The final structures were investigated by scanning electron microscopy (SEM) after focused ion beam (FIB) cross-sectioning and polishing. The work was done jointly by NREL staff and Leap Photovoltaics (Leap PV) employees stationed at NREL. The samples were then taken to Leap PV for further processing. Training the Leap PV employee on various NREL techniques (laser cutting, screen printing, thermal processing, characterization) was part of the scope.

14 SOLAR ENERGY↗

Feasibility Assessment of Using Electrical Impedance Tomography for Damage Localization in Graphite Microreactor Components

Microreactors have great potential to decrease capital costs and construction timelines, reducing the barriers to implementing advanced nuclear reactor technologies. However, the lower power output of these microreactors introduces economic challenges if the operation and maintenance costs cannot be reduced sufficiently. Many microreactor concepts use graphite materials for in-core moderator and structural purposes, which will require periodic inspection or, ideally, in situ structural health monitoring. This work describes an initial evaluation of the feasibility of leveraging graphite’s semiconducting properties to perform electrical impedance tomography (EIT) for defect localization. First, a study was performed to identify the best methods for bonding electrical contacts to minimize the effects of contact resistance that interfere with impedance measurements of the graphite. After determining the best bonding approach, electrodes were attached to multiple graphite components with varying geometries (e.g., simple block and more representative microreactor hexagonal block). In parallel, finite element analysis approaches were developed and implemented to analyze the impact of defects and contact resistances and to inform an iterative inverse model for reconstructing the conductivity distribution. The results of this study show that defect localization in graphite components is possible using EIT if a sufficient number of electrodes (to improve spatial resolution) can be bonded using a technique with very low contact resistance and those contact resistances remain stable during reactor operation. If the reactor core and vessel design do not allow electrodes to be bonded during reactor operation, then it may be possible to detach/reattach electrodes between reactor operation and outages if a suitable mechanical connection that offers repeatable contact resistance can be identified. Alternatively, future work could focus on identifying contacts that can survive the harsh reactor operating environment so that contacts do not need to be removed.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Towards Commercialization of Low-Cost, Crack-Tolerant, Screen-Printable Metallization by Full-Size Module Testing and Field Characterization

This project is motivated by the need to develop a materials engineering solution to reduce solar module degradation caused by cell cracks. The cell-crack-induced power loss is a long-term degradation mechanism and one of the main causes of solar panel field failures. Cell cracks can occur during module fabrication, transportation, installation, and long-term operation due to thermomechanical stressors. Our team’s internal estimation – based on the national weather pattern, frequency of severe weather, and 39- GW asset survey by Heliolytics – reveals that the cell-crack-induced module degradation translates to lost revenues >$17B over an average 5-year period for solar farm owners and to reduced reliability (<25 years panel lifetime) for solar energy consumers. In response to this challenge, the prime recipient offers a metal matrix composite (MMC) silver paste that is tailor-engineered for screen-printing gridlines and busbars, which serve as the electrical contacts on solar cells. We formulate our MMC paste by adding low-cost (∼0.02¢/WDC for research grade), surface-engineered carbon nanotubes to commercially available silver paste. The MMC paste offers a drop-in, cost-effective solution to cell cracks for solar cell and module manufacturers. The main goal of this project was to conduct field-relevant, module-level analysis and qualification of MMC metallization.

14 SOLAR ENERGY↗

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

TCF Base Technology-Specific Final Report: Negative Cracked Film Lithography for PERC CdTe

NLR worked with the world's leading thin-film photovoltaic manufacturer - First Solar, an American company - to develop electrical contacting methods that improve the power conversion efficiency of First Solar's cells by 0.5% absolute. We met this milestone but contrary to our hypothesis, these performance gains are not passivation (PERC)-based. Instead, we identified another mechanism by which our micropatterned Al 2 O 3 contacts improve efficiency. Using the results of this project, we will adapt NLR's cracked film lithography intellectual property (IP) toward the application we identified, which is a new route to commercialization.

14 SOLAR ENERGY↗

Lightweight coaxial cable connector reduces signal loss

Connectors with milled interface surfaces for perfect electrical contact eliminate secondary- emission discharge and low signal loss in RF coaxial cables. the connectors which contain alignment and centering components for proper joint concentricity are used in communications systems designs.

Brejcha, A. G., Jr.↗

Device serves as hinge and electrical connector for circuit boards

Hinge makes both sides of electrical circuit boards readily accessible for component checkout and servicing. The hinge permits mounting of two circuit boards and incorporates connectors to maintain continuous electrical contact between the components on both boards.

Bethel, P. G.↗