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NASA NTRS2010

Localized Triple Modular Redundancy vs. Distributed Triple Modular Redundancy on a ProASIC3E Reprogrammable FPGA

Field programmable gate arrays (FPGA) are used in every space application. Currently, most space flight applications use radiation hardened (RH) FPGAs, which are very expensive. There is a desire to use cheaper, commercial off the shelf reprogrammable FPGAs, which are more susceptible to radiation effects known as single-event effects (SEE). The RH parts have SEE and total ionizing dose (TID) hardened elements pre-integrated into the part. This means that the designer does not need to implement any hardening techniques while configuring the device. The COTS parts on the other hand must be mitigated by design in order to insure any form of mitigation. The design techniques this project examines concern the use of localized triple modular redundancy (LTMR) and distributed triple modular redundancy (DTMR). LTMR triples every flip flop in the device architecture while DTMR triples everything except for the global routes (clocks, resets, and enables). The testing was performed on a ProASIC3E FPGA at the Texas A&M cyclotron facility. Two design architectures were used: shift registers and counters, both with LTMR and DTMR mitigation techniques. The test results prove that DTMR is more effective at reducing SEE than LTMR. We also determined that there was not a significant difference between the use of shift registers and counters for test purposes. More testing is required to obtain additional linear energy transfer values for each architecture and mitigation technique in order to determine the most cost-effective method of SEE mitigation.

McGuffey, Alex↗

NASA NTRS2012

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

Irom, Farokh↗

NASA NTRS2012

Radiation tests of highly scaled, high-density, commercial, nonvolatile NAND flash memories— update 2012

Allen, Gregory R.↗

NASA NTRS2006

Single-Event Transients in Voltage Regulators

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

circuit testing↗

NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗

NASA NTRS1989

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗

NASA NTRS2004

Tradeoffs in Flight Design Upset Mitigation in State of the Art FPGAs: Hardened by Design vs. Design Level Hardening

This presentation compares and contrasts the effectiveness and the system/designer impacts of the two main approaches to upset hardening: the Actel approach (RTSX-S and RTAX-S) of low-level (inside each flip-flop) triplication and the Xilinx approach (Virtex and Virtex2) of design-level triplication of both functional blocks and voters. The effectiveness of these approaches is compared using measurements made in conjunction with each of the FPGAs' manufacturer: for Actel, published data [1] and for Xilinx, recent results from the Xilinx SEE Test Consortium (note that the author is an active and founding member). The impacts involve Actel advantages in the areas of transistor-utilization efficiency and minimizing designer involvement in the triplication while the Xilinx advantages relate to the ability to custom tailor upset hardness and the flexibility of re-configurability. Additionally, there are currently clear Xilinx advantages in available features such as the number of I/O's, logic cells, and RAM blocks as well as speed. However, the advantage of the Actel anti-fuses for configuration over the Xilinx SRAM cells is that the latter need additional functionality and external circuitry (PROMs and, at least a watchdog timer) for configuration and configuration scrubbing. Further, although effectively mitigated if done correctly, the proton upset-ability of the Xilinx FPGAs is a concern in severe proton-rich environments. Ultimately, both manufacturers' upset hardening is limited by SEFI (single-event functional interrupt) rates where it appears the Actel results are better although the Xilinx Virtex2-family result of about one SEFI in 65 device-years in solar-min GCR (the more intense part of the galactic cosmic-ray background) should be acceptable to most missions

radiation effects↗

NASA NTRS2011

Orion Absolute Navigation System Progress and Challenges

The Orion spacecraft is being designed as NASA's next-generation exploration vehicle for crewed missions beyond Low-Earth Orbit. The navigation system for the Orion spacecraft is being designed in a Multi-Organizational Design Environment (MODE) team including contractor and NASA personnel. The system uses an Extended Kalman Filter to process measurements and determine the state. The design of the navigation system has undergone several iterations and modifications since its inception, and continues as a work-in-progress. This paper seeks to benchmark the current state of the design and some of the rationale and analysis behind it. There are specific challenges to address when preparing a timely and effective design for the Exploration Flight Test (EFT-1), while still looking ahead and providing software extensibility for future exploration missions. The primary measurements in a Near-Earth or Mid-Earth environment consist of GPS pseudorange and deltarange, but for future explorations missions the use of star-tracker and optical navigation sources need to be considered. Discussions are presented for state size and composition, processing techniques, and consider states. A presentation is given for the processing technique using the computationally stable and robust UDU formulation with an Agee-Turner Rank-One update. This allows for computational savings when dealing with many parameters which are modeled as slowly varying Gauss-Markov processes. Preliminary analysis shows up to a 50% reduction in computation versus a more traditional formulation. Several state elements are discussed and evaluated, including position, velocity, attitude, clock bias/drift, and GPS measurement biases in addition to bias, scale factor, misalignment, and non-orthogonalities of the accelerometers and gyroscopes. Another consideration is the initialization of the EKF in various scenarios. Scenarios such as single-event upset, ground command, pad alignment, cold start are discussed as are strategies for whole and partial state updates as well as covariance considerations. Strategies are given for dealing with latent measurements and high-rate propagation using multi-rate architecture. The details of the rate groups and the data ow between the elements is discussed and evaluated.

Holt, Greg N.↗

NASA NTRS2012

Orion Absolute Navigation System Progress and Challenge

The absolute navigation design of NASA's Orion vehicle is described. It has undergone several iterations and modifications since its inception, and continues as a work-in-progress. This paper seeks to benchmark the current state of the design and some of the rationale and analysis behind it. There are specific challenges to address when preparing a timely and effective design for the Exploration Flight Test (EFT-1), while still looking ahead and providing software extensibility for future exploration missions. The primary onboard measurements in a Near-Earth or Mid-Earth environment consist of GPS pseudo-range and delta-range, but for future explorations missions the use of star-tracker and optical navigation sources need to be considered. Discussions are presented for state size and composition, processing techniques, and consider states. A presentation is given for the processing technique using the computationally stable and robust UDU formulation with an Agee-Turner Rank-One update. This allows for computational savings when dealing with many parameters which are modeled as slowly varying Gauss-Markov processes. Preliminary analysis shows up to a 50% reduction in computation versus a more traditional formulation. Several state elements are discussed and evaluated, including position, velocity, attitude, clock bias/drift, and GPS measurement biases in addition to bias, scale factor, misalignment, and non-orthogonalities of the accelerometers and gyroscopes. Another consideration is the initialization of the EKF in various scenarios. Scenarios such as single-event upset, ground command, and cold start are discussed as are strategies for whole and partial state updates as well as covariance considerations. Strategies are given for dealing with latent measurements and high-rate propagation using multi-rate architecture. The details of the rate groups and the data ow between the elements is discussed and evaluated.

Holt, Greg N.↗

NASA NTRS2017

Evaluation of the Radiation Susceptibility of a 3D NAND Flash Memory

We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

single-event upset (SEU)↗

NASA NTRS2017

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

3D NAND Flash memory; radiation susceptibility; si↗

NASA NTRS1994

Uncertainties in radiation effect predictions for the natural radiation environments of space

Future manned missions beyond low earth orbit require accurate predictions of the risk to astronauts and to critical systems from exposure to ionizing radiation. For low-level exposures, the hazards are dominated by rare single-event phenomena where individual cosmic-ray particles or spallation reactions result in potentially catastrophic changes in critical components. Examples might be a biological lesion leading to cancer in an astronaut or a memory upset leading to an undesired rocket firing. The risks of such events appears to depend on the amount of energy deposited within critical sensitive volumes of biological cells and microelectronic components. The critical environmental information needed to estimate the risks posed by the natural space environments, including solar flares, is the number of times more than a threshold amount of energy for an event will be deposited in the critical microvolumes. These predictions are complicated by uncertainties in the natural environments, particularly the composition of flares, and by the effects of shielding. Microdosimetric data for large numbers of orbits are needed to improve the environmental models and to test the transport codes used to predict event rates.

Mcnulty, P. J.↗

NASA NTRS2003

Characteristics of Single-Event Upsets in a Fabric Switch (ADS151)

Abstract-Two types of single event effects - bit errors and single event functional interrupts - were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion LET and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single event functional interrupts occurred when the laser was focused on the second rank latch containing the data specifying the state of each switch in the 33x17 matrix.

Buchner, Stephen↗

NASA NTRS2004

In-Flight Observations of Long-Term Single-Event Effect (SEE) Performance on X-ray Timing Explorer (XTE) Solid-state Recorders (SSRs)

We present multi-year Single Event Upset (SEU) flight data on Solid State Recorder (SSR) memories for the X-ray Timing Explorer (XTE) NASA mission. Actual SEU rates are compared to the predicted rates based on ground test data and environment models.

Poivey, Christian↗

NASA NTRS2015

Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.

single event effects↗

NASA NTRS2017

Single Event Effect Testing of the Micron MT46V128M8

The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).

Single Event Functional Interrupts (SEFI)↗

NASA NTRS2018

Adaptive Deployable Entry Placement Technology (ADEPT) Development for Small Sat Class Venus Missions

The Adaptable, Deployable Entry and Placement Technology (ADEPT) is a novel approach for entry vehicle design. Similar to an umbrella, it is stowed during launch and deployed prior to entry. ADEPT employs a high performance, 3-D woven, carbon fabric to serve as the primary surface of the mechanically deployed system. The successful ADEPT sounding rocket flight test matured the 1-meter Class ADEPT in the areas of deployment and structural integrity, and provided aerodynamic flight characteristics of the ADEPT open-back configuration from Mach 3 to Mach 0.3. Aerocapture uses the aerodynamic drag from a single hyperbolic atmospheric pass to provide the delta-V needed for orbit insertion. Studies suggest that, compared to propulsive orbit insertion, aerocapture could increase delivered payload by 70 percent at Venus. Drag modulation aerocapture, which shows promise of being simpler and more cost-effective than the more-often studied lift modulation methods, uses in-flight transformations of an entry vehicle's drag area to control the amount of deceleration produced during an atmospheric pass. In single-event drag modulation, a drag device is jettisoned after the appropriate deceleration. ADEPT, due to its unique ability to fold and unfold, is being considered for this SmallSat class payload mission applications.

Cassell, Alan M.↗

NASA NTRS2009

Radiation tests of highly scaled high density commercial nonvolatile NAND flash memories update 2009

Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.

Nguyen, Duc N.↗