Search NASA⌕ Search

SEARCH · Search NASA

Results for “V”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Synergistic Development, Test, and Qualification Approaches for the Ares I and V Launch Vehicles

The U.S. National Aeronautics and Space Administration (NASA) initiated plans to develop the Ares I and Ares V launch vehicles in 2005 to meet the mission objectives for future human exploration of space. Ares I is designed to provide the capability to deliver the Orion crew exploration vehicle (CEV) to low-Earth orbit (LEO), either for docking to the International Space Station (ISS) or docking with an Earth departure stage (EDS) and lunar lander for transit to the Moon. Ares V provides the heavy-lift capability to deliver the EDS and lunar lander to orbit. An integrated test plan was developed for Ares I that includes un-crewed flight validation testing and ground testing to qualify structural components and propulsion systems prior to operational deployment. The overall test program also includes a single development test flight conducted prior to the Ares I critical design review (CDR). Since the Ares V concept was formulated to maximize hardware commonality between the Ares V and Ares I launch vehicles, initial test planning for Ares V has considered the extensibility of test approaches and facilities from Ares I. The Ares V test plan was part of a successful mission concept review (MCR) in 2008.

Cockrell, Charles E.↗
NASA NTRS2009

Storm/Quiet Ratio Comparisons Between TIMED/SABER NO (sup +)(v) Volume Emission Rates and Incoherent Scatter Radar Electron Densities at E-Region Altitudes

Broadband infrared limb emission at 4.3 microns is measured by the TIMED/SABER instrument. At night, these emission observations at E-region altitudes are used to derive the so called NO+(v) Volume Emission Rate (VER). NO+(v) VER can be derived by removing the background CO2(v3) 4.3 microns radiance contribution using SABER-based non-LTE radiation transfer models, and by performing a standard Abel inversion on the residual radiance. SABER observations show that NO+(v) VER is significantly enhanced during magnetic storms in accordance with increased ionization of the neutral atmosphere by auroral electron precipitation, followed by vibrational excitation of NO+ (i.e., NO+(v)) from fast exothermic ion-neutral reactions, and prompt infrared emission at 4.3 m. Due to charge neutrality, the NO+(v) VER enhancements are highly correlated with electron density enhancements, as observed for example by Incoherent Scatter Radar (ISR). In order to characterize the response of the storm-time E-region from both SABER and ISR measurements, a Storm/Quiet ratio (SQR) quantity is defined as a function of altitude. For SABER, the SQR is the ratio of the storm-to-quiet NO+(v) VER. SQR is the storm-to-quiet ratio of electron densities for ISR. In this work, we compare SABER and ISR SQR values between 100 to 120 km. Results indicate good agreement between these measurements. SQR values are intended to be used as a correction factor to be included in an empirical storm-time correction to the International Reference Ionosphere model at E-region altitudes.

Fernandez, J. R.↗
NASA NTRS2011

Executive Summary of Ares V: Lunar Capabilities Concept Review Through Phase A-Cycle 3

This Technical Memorandum (TM) was generated as an overall Ares V summary from the Lunar Capabilities Concept Review (LCCR) through Phase A-Cycle 3 (PA-C3) with the intent that it may be coupled with separately published appendices for a more detailed, integrated narrative. The Ares V has evolved from the initial point of departure (POD) 51.00.48 LCCR configuration to the current candidate POD, PA-C3D, and the family of vehicles concept that contains vehicles PA-C3A through H. The logical progression from concept to POD vehicles is summarized in this TM and captures the trade space and performance of each. The family-of-vehicles concept was assessed during PA-C3 and offered flexibility in the path forward with the ability to add options deemed appropriate. A description of each trade space is given in addition to a summary of each Ares V element. The Ares V contributions to a Mars campaign are also highlighted with the goal of introducing Ares V capabilities within the trade space. The assessment of the Ares V vehicle as it pertains to Mars missions remained locked to the architecture presented in Mars Design Reference Authorization 5.0 using the PA-C3D vehicle configuration to assess Mars transfer vehicle options, in-space EDS capabilities, docking adaptor and propellant transfer assessments, and lunar and Mars synergistic potential.

Holladay, J. B.↗
NASA NTRS2015

V-SUIT Model Validation Using PLSS 1.0 Test Results

The dynamic portable life support system (PLSS) simulation software Virtual Space Suit (V-SUIT) has been under development at the Technische Universitat Munchen since 2011 as a spin-off from the Virtual Habitat (V-HAB) project. The MATLAB(trademark)-based V-SUIT simulates space suit portable life support systems and their interaction with a detailed and also dynamic human model, as well as the dynamic external environment of a space suit moving on a planetary surface. To demonstrate the feasibility of a large, system level simulation like V-SUIT, a model of NASA's PLSS 1.0 prototype was created. This prototype was run through an extensive series of tests in 2011. Since the test setup was heavily instrumented, it produced a wealth of data making it ideal for model validation. The implemented model includes all components of the PLSS in both the ventilation and thermal loops. The major components are modeled in greater detail, while smaller and ancillary components are low fidelity black box models. The major components include the Rapid Cycle Amine (RCA) CO2 removal system, the Primary and Secondary Oxygen Assembly (POS/SOA), the Pressure Garment System Volume Simulator (PGSVS), the Human Metabolic Simulator (HMS), the heat exchanger between the ventilation and thermal loops, the Space Suit Water Membrane Evaporator (SWME) and finally the Liquid Cooling Garment Simulator (LCGS). Using the created model, dynamic simulations were performed using same test points also used during PLSS 1.0 testing. The results of the simulation were then compared to the test data with special focus on absolute values during the steady state phases and dynamic behavior during the transition between test points. Quantified simulation results are presented that demonstrate which areas of the V-SUIT model are in need of further refinement and those that are sufficiently close to the test results. Finally, lessons learned from the modelling and validation process are given in combination with implications for the future development of other PLSS models in V-SUIT.

Olthoff, Claas↗
NASA NTRS2008

Ares V: Application to Solar System Scientific Exploration

The development of the Ares V launch vehicle will provide levels of performance unseen since the days of Apollo. This capability, like the Saturn V before it, is being developed primarily for crewed lunar missions. However, the tremendous jump in performance offered by the Ares V launch system has tremendous potential for the furtherance of robotic solar system exploration missions as well. Preliminary performance assessments indicate that Ares V could deliver 5 times the payload to Mars as compared to the most capable US expendable launch vehicle available today. Beyond Mars, the outer planets offer a number of high-priority investigations with compelling science. Presently, missions to these destinations are only achievable using indirect flights with gravity assist trajectories and, in many cases, suffer from long flight times. An Ares V with an upper stage could capture these missions using direct flights with shorter interplanetary transfer times that would enable extensive in situ investigations and possibly the return of samples to Earth. This paper lays out an estimate of Ares V performance for moderate and high C3 missions, and goes on to discuss a range of revolutionary mission concepts that could be enabled by this significant in-crease in launch capability.

Elliott, John↗
DOE OSTI2024

“Max-tech FHR”: What is the maximum technically achievable water delivery capacity from a single 120 V plug?

Electrifying water heating will require affordable, direct drop-in replacements for existing gas water heaters that meet consumer expectations for hot water delivery. For many replacement scenarios, affordability requires a replacement option with like-for-like physical product dimensions, and existing consumer expectations presume a large delivery capacity from a small water heater. This work explores the technical potential for hot water delivery capacity for a heat pump water heater (HPWH) powered from a common 120 V plug. Delivery capability in this work is quantified by two metrics: the First Hour Rating (FHR) defined in the Code of Federal Regulations, and a real-world draw profile that resulted in hot water runout during field studies of 120 V HPWHs. The work focuses on the common “tall-and-slim” gas water heater product category, with external product dimensions of 20 inch diameter and 60 inch height. Using a simulation model in DOE/ORNL Heat Pump Design Model, validated by experimental baseline testing of a commercially available 120 V HPWH model, several measures were evaluated to maximize the delivery capacity of a 120 V HPWH. The 120 V HPWH was constrained by 1) external product dimensions of 20 in diameter and 60 inch height, 2) electrical power of 1.5 kW (85% of the available power from a dedicated 120 V, 15 A circuit), and 3) commercially-available components. The measures implemented included a large compressor, a pumped loop with plate heat exchanger to maximize tank stratification, enlarged heat exchangers, and relatively thin insulation to maximize the water storage volume.

Gluesenkamp, Kyle↗
DOE OSTI2024

Magnetic properties of the frustrated spin-$\frac{1}{2}$ capped-kagome antiferromagnet (CsBr)Cu 5 V 2 O 10

Here, the structural and magnetic properties of a spin-$\frac{1}{2}$ averievite (CsBr)⁢Cu 5⁢ V 2 ⁢O 10 are investigated by means of temperature-dependent x-ray diffraction, magnetization, heat capacity, and 51 V nuclear magnetic resonance (NMR) measurements. The crystal structure (trigonal, $P\bar{3}$) features a frustrated capped-kagome lattice of the magnetic Cu 2+ ions. Magnetic susceptibility analysis indicates a large Curie-Weiss temperature of $\theta$ CW ≃ -175K. Heat capacity signals the onset of a magnetic long-range-order (LRO) at T N ≃21.5K at zero magnetic field due to the presence of significant inter-planer coupling in this system. The magnetic LRO below 27 K is further evident from the drastic change in the 51 V NMR signal intensity and rapid enhancement in the 51 V spin-lattice relaxation rate in a magnetic field of 6.3 T. The frustration index ƒ=|⁢$\theta$ CW ⁢|/⁢T N ≃ 8 ascertains strong magnetic frustration in this compound. From the high-temperature value of the 51 V NMR spin-lattice relaxation rate, the leading antiferromagnetic exchange interaction between the Cu 2+ ions is calculated to be J/k B ≃ 136K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Oxygen Vacancy Evolution at Li x V 2 O 5 /LiPON Solid State Electrochemical Interfaces Using Depth Resolved Cathodoluminescence Spectroscopy

The formation of oxygen vacancies at buried LiPON/ Li x V 2 O 5 interfaces has been observed on a near-nanometer scale and nondestructively using depth-resolved cathodoluminescence spectroscopy (DRCLS) and interfacial markers. Before electrochemical cycling, as-deposited LiPON/Li x V 2 O 5 exhibits a 1.6 eV defect optical emission, which density functional theory calculations identify as originating from oxygen vacancies. This defect appears first within a few nanometers of the buried LiPON/Li x V 2 O 5 interface without cycling, indicating that spontaneous O diffusion from the Li x V 2 O 5 lattice into LiPON may have caused these interface-localized oxygen vacancy defects. DRCLS measured the intensity and spatial distribution of this oxygen vacancy signal as a function of electrochemical cycling in a LiPON/Li x V 2 O 5 half-cell, showing oxygen vacancy signal increasing and moving deeper into the electrode with increased cycle number. Significant electrochemical irreversibility was also observed, with poor Coulombic efficiency and a 15% drop in capacity over 50 cycles. Theoretical simulations predict that the presence of oxygen vacancies increases the energy barrier for lithium diffusion significantly, indicating that this aggregation of oxygen vacancies could be another battery degradation mechanism accompanying lithiation induced phase changes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

High-frequency electrical behavior in V 3 O 5 thin films

Vanadium oxides are known for their metal–insulator transition (MIT), with V 3 O 5 being notable for its transition temperature exceeding room temperature. At about 430 K, this material shows a change in crystal symmetry accompanied with one order of magnitude increase in its electrical conductivity and alterations in its optical properties. Although the property changes during the MIT in V 3 O 5 are less pronounced than those observed in VO 2 , its transition temperature is 90 K higher, making it appealing for applications requiring elevated temperatures. In this article, the high-frequency characteristics were determined in a V 3 O 5 two-terminal device in the range from 5 to 35 GHz. The S-parameters showed that the return loss at room temperature was close to −1.5 dB, and the isolation between ports was approximately −50 dB. At temperatures above the metal–insulator transition, the isolation decreased to around −40 dB at 35 GHz. For S11 and S22, similar behavior was observed at room temperature, with a notable change in the S-parameter phase of the device. This behavior suggests that V 3 O 5 may function well as a capacitor because the considerable change in phase could control the flow of electrical signals in devices. This property also may be used for matching purposes, especially considering its response to temperature changes. Additionally, conductivity calculation from S-parameters shows a decrease of approximately two orders of magnitude at 500 K and one order of magnitude at 300 K compared to DC values. These findings highlight V 3 O 5 potential for integration into radio frequency devices that demand consistent performance in high-temperature environments.

36 MATERIALS SCIENCE↗
NASA NTRS1972

The intrinsic values and color excesses of (B-V) for 115 F-K supergiants

Color excesses in B-V are determined indirectly from a study of Stromgren's b-y color for a sample of F0 - K5 supergiants. The resulting E(B-V)'s are estimated to have an expected precision of + or - 0.05. With the calculated color excesses and the observed values of B-V given in various catalogs, the run of B-V with spectral type is obtained. This B-V/(spectral type) relationship is compared with those found previously by other investigators.

Kelsall, T.↗
NASA NTRS1972

The III-V photocathode - A major detector development.

Description of new (III-V) photocathodes which show improvements in sensitivity of as much as ten to a hundred times over conventional cathodes in the near infrared and useful improvements at shorter wavelengths. The development stems from a combination of basic knowledge of the photoemission process, gained in the 1950s, and the advancing understanding of the technology of III-V materials, in the 1960s. The superior performance of these cathodes is due to the fact that the vacuum level at the surface lies below the bottom of the conduction band in the bulk of the material. Consequently, the threshold of response is set by the III-V bandgap. The bandgap (and the threshold of response) can be varied by alloying different III-V materials together. A reduction in thermionic emission is realized with these cathodes. At present no semitransparent III-V cathodes with comparably interesting performance are available. The problems hindering further improvements, as well as the problems of placing these cathodes in practical multipliers and image tubes, are discussed briefly.

Spicer, W. E.↗
NASA NTRS1977

Apparent wavelength dependence of v sin i for Zeta Tauri

It was previously reported that the derived projected rotational velocity (v sin i) of the B shell star, Zeta Tau, appeared to depend on the wavelength of the line used in the analysis. This letter documents the apparent wavelength dependence of v sin i for Zeta Tau in order to provide an observational basis against which quantitative explanations can be tested. A value of 300 km/s is adopted for v sin i on the basis of an examination of the visual line spectrum, particularly the lines of He I at 4026 and 4471 A and Mg II at 4481 A. Analysis of the far-UV resonance lines of Si III at 1206 A and Si IV at 1393 and 1463 A in Copernicus spectrograms of Zeta Tau yields a representative value of no more than 150 km/s for v sin i. Gravity darkening of the star's atmosphere and distention of the atmosphere by rapid differential rotation are considered as possible explanations for the discrepancy between the v sin i values determined from the UV and visual lines.

Heap, S. R.↗
NASA NTRS1979

Characteristics of the inverted-V event

An attempt is made to determine the origin of the inverted-V precipitating electrons and mechanisms that could create the inverted-V structure. The energy and pitch angle structures are compared with predictions from several theories that have been proposed to explain the origin of inverted-V events. Data from the AE-D satellite indicate that the origin of the inverted-V precipitating electrons is in the magnetosphere, the most probable regions being the plasma sheet and the neutral sheet. The energy and pitch angle distributions show that electrons are trapped between the mirror points and the electric field potential. The observations suggest that field-aligned precipitating electrons have been heated, probably when they were accelerated by the parallel electric field. Qualitatively, the detailed structures of the inverted-V events favor the theory of anomalous resistivity.

Lin, C. S.↗
NASA NTRS1980

The position and polarization of Type V solar bursts

Observations of the position and polarization of Type V solar radio bursts and their preceding Type III bursts are presented. The polarization, frequency range, source position, source movement, source size and brightness temperature of the bursts were measured using a 24-220 MHz spectropolarimeter, an 8-8000 MHz spectrograph and a three-frequency radioheliograph. Type V radiation is frequently found to have the opposite sense of circular polarization from that of the preceding Type III burst, with a degree of polarization similar to that of harmonic Type III radiation. A reversal of polarization is not observed when the accompanying Type III burst has no fundamental-harmonic structure, or when the Type V radiation is poorly developed. Possible mechanisms for the reversal are examined, including opposite magnetic field directions in Type III and V bursts, changes in mode coupling and a change in the mode of emission from o-mode for Type III to x-mode for Type V, and conditions needed for the mode change which is considered the most likely mechanism, are determined.

Dulk, G. A.↗
NASA NTRS1982

Copernicus observations of the N v resonance doublet in 53 early-type stars

UV spectra in the wavelength interval 1170-1270 A are presented for 53 early-type stars ranging in spectral type from O6.5 V to B2.5 IV. The sample includes four Wolf-Rayet stars, seven known Oe-Be stars, and six galactic halo OB stars. A qualitative analysis of the stellar N v doublet reveals that: (1) N v is present in all stars hotter and more luminous than type B0 for the main sequence, B1 for giants, and B2 for supergiants; (2) shell components of N v and an unidentified absorption feature at 1230 A are present in about half of the stars; (3) the column density of N v is well correlated with bolometric luminosity over the spectral range O6 to B2; and (4) the ratio of emission to absorption equivalent width is a factor of 2 smaller in the main sequence stars than in supergiants, which suggests that the wind structure changes as a star evolves. For several stars, this ratio is too small to be explained by traditional wind models.

Abbott, D. C.↗
NASA NTRS1983

v-representability and density functional theory

It is shown that if n(r) is the discrete density on a lattice (enclosed in a finite box) associated with a nondegenerate ground state in an external potential v(r) (i.e., is 'v-representable'), then the density n(r) + mu(r), with m(r) arbitrary (apart from trivial constraints) and mu small enough, is also associated with a nondegenerate ground state in an external potential v'(r) near v(r); i.e., n(r) + m(r) is also v-representable. Implications for the Hohenberg-Kohn variational principle and the Kohn-Sham equations are discussed.

Kohn, W.↗