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At least 181 records · Page 10

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NASA NTRS1986

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Bauhahn, P.↗

NASA NTRS1988

Dual-Cathode Electron-Beam Source

Beam from either cathode electromagnetically aligned with exit port. Electron beam from either of two cathodes deflected by magnetic and electric fields to central axis. Mechanical alignment of beam easy because cathode axes, anode apertures, and electron trajectories coplanar. Applications where uninterrupted service needed: scanning electron microscopes, transmission electron microscopes, electron-beam lithography equipment, Auger instruments, and microfocused x-ray sources.

Bradley, James G.↗

NASA NTRS1989

Computer Aided Design of Computer Generated Holograms for electron beam fabrication

Computer Aided Design (CAD) systems that have been developed for electrical and mechanical design tasks are also effective tools for the process of designing Computer Generated Holograms (CGHs), particularly when these holograms are to be fabricated using electron beam lithography. CAD workstations provide efficient and convenient means of computing, storing, displaying, and preparing for fabrication many of the features that are common to CGH designs. Experience gained in the process of designing CGHs with various types of encoding methods is presented. Suggestions are made so that future workstations may further accommodate the CGH design process.

Urquhart, Kristopher S.↗

NASA NTRS1989

Design of a normal incidence multilayer imaging X-ray microscope

Normal incidence multilayer Cassegrain X-ray telescopes were flown on the Stanford/MSFC Rocket X-ray Spectroheliograph. These instruments produced high spatial resolution images of the sun and conclusively demonstrated that doubly reflecting multilayer X-ray optical systems are feasible. The images indicated that aplanatic imaging soft X-ray/EUV microscopes should be achievable using multilayer optics technology. A doubly reflecting normal incidence multilayer imaging X-ray microscope based on the Schwarzschild configuration has been designed. The design of the microscope and the results of the optical system ray trace analysis are discussed. High resolution aplanatic imaging X-ray microscopes using normal incidence multilayer X-ray mirrors should have many important applications in advanced X-ray astronomical instrumentation, X-ray lithography, biological, biomedical, metallurgical, and laser fusion research.

Shealy, David L.↗

NASA NTRS1991

Compact X-Ray And Extreme-Ultraviolet Monochromator

Monochromator for x-ray and extreme-ultraviolet radiation provides higher spectral resolution than achieved with thin-metal-foil broad-band-pass filters. Uses Bragg reflection to band-pass-filter radiation from high-intensity, broad-spectrum source. Operates over much broader x-ray and extreme-ultraviolet spectrum than devices based upon natural crystals. Intended to filter continuum radiation from sources like synchrotrons, laser plasma sources, free-electron lasers, and wigglers to produce monochromatic beams for testing and analysis of x-ray and extreme-ultraviolet telescopes and microscopes, for calibration of photographic films and detectors, for biological and biomedical research, for x-ray lithography, for processing of materials, and for research in properties of materials.

Hoover, Richard B.↗

NASA NTRS1991

Growing Cobalt Silicide Columns In Silicon

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Fathauer, Obert W.↗

NASA NTRS1991

Ultra-High-Spectral-Resolution X-Ray/EUV Monochromator

Ultra-high-spectral-resolution X-Ray/EUV monochromator depends on Bragg reflection from multilayer coats and diffraction by mutlilayer-coated grating to select narrow wavelength band from input beam. Its monochromatic output beam of accurately known wavelength very useful in testing and calibration of x-ray telescopes, x-ray microscopes, photographic films, and photodetectors; in research in biological and biomedical disciplines, x-ray crystallography, properties and processing of materials, and x-ray lasers; and in x-ray lithography.

Hoover, Richard B.↗

NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗

NASA NTRS1991

Design and analysis of aspherical multilayer imaging X-ray microscope

Spherical Schwarzschild microscopes for soft X-ray applications in microscopy and projection lithography employ two concentric spherical mirrors that are configured such that the third-order spherical aberration and coma are zero. Based on incoherent, sine-wave MTF calculations, the object-plane resolution of a magnification-factor-20 microscope is presently analyzed as a function of object height and numerical aperture of the primary for several spherical Schwarzschild, conic, and aspherical two-mirror microscope configurations.

Shealy, David L.↗

NASA NTRS1992

Multilayer Monochromator For Hard X Rays And Gamma Rays

Compact monochromator for hard x rays and gamma rays provides high spectral resolution with high throughput. Resembles instruments in "Compact X-Ray and Extreme-Ultraviolet Monochromator" (MFS-28499), "Scanning X-Ray or Extreme-Ultraviolet Monochromator" (MFS-28492), "Ultra-High-Spectral-Resolution X-Ray/EUV Monochromator" (MFS-28500), and "Four-Mirror X-Ray and Extreme-Ultraviolet Monochromator" (MFS-28498). Operates on principle of multilayer Bragg reflector. Used in nuclear, astronomical, and biomedical research, x-ray crystallography, research on processing materials, research in x-ray lasers, and x-ray lithography.

Hoover, Richard B.↗

NASA NTRS1991

X ray microscope assembly and alignment support and advanced x ray microscope design and analysis

Considerable efforts have been devoted recently to the design, analysis, fabrication, and testing of spherical Schwarzschild microscopes for soft x ray application in microscopy and projection lithography. The spherical Schwarzschild microscope consists of two concentric spherical mirrors configured such that the third order spherical aberration and coma are zero. Since multilayers are used on the mirror substrates for x ray applications, it is desirable to have only two reflecting surfaces in a microscope. In order to reduce microscope aberrations and increase the field of view, generalized mirror surface profiles have been considered in this investigation. Based on incoherent and sine wave modulation transfer function (MTF) calculations, the object plane resolution of a microscope has been analyzed as a function of the object height and numerical aperture (NA) of the primary for several spherical Schwarzschild, conic, and aspherical head reflecting two mirror microscope configurations.

Shealy, David L.↗

NASA NTRS1991

Optical data storage and metallization of polymers

The utilization of polymers as media for optical data storage offers many potential benefits and consequently has been widely explored. New developments in thermal imaging are described, wherein high resolution lithography is accomplished without thermal smearing. The emphasis was on the use of poly(ethylene terephthalate) film, which simultaneously serves as both the substrate and the data storage medium. Both physical and chemical changes can be induced by the application of heat and, thereby, serve as a mechanism for high resolution optical data storage in polymers. The extension of the technique to obtain high resolution selective metallization of poly(ethylene terephthalate) is also described.

Roland, C. M.↗

NASA NTRS1992

Properties Of Plasma-Deposited Amorphous Hydrogenated Carbon

Report reviews experimental research on plasma-deposited films of hydrogenated amorphous carbon. Such films exhibit electrical resistivity, semi-transparency, mechanical hardness, and chemical inertness. Useful as gate dielectrics and passivating layers in semiconductor devices, insulators for metal/insulator/metal devices, and masks in nanometer lithography. Show promise as wear-resistant, hard solid lubricating coats for bearings and optical components.

Miyoshi, Kazuhisa↗

NASA NTRS1993

Synthesis, Properties, and Applications Of Boron Nitride

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

Pouch, John J.↗

NASA NTRS1993

Amorphous-Carbon Films

Report describes structure, preparation, characterization, and applications of films of amorphous-carbon. Amorphous-carbon films potentially useful as masks in x-ray lithography, layers for passivation of high-speed microelectronic circuits, hard films to protect magnetic recording media and optical components from degradation by chemical etching or wear, and radiation detectors.

Pouch, John J.↗

NASA NTRS1992

VETA-I x ray test analysis

This interim report presents some definitive results from our analysis of the VETA-I x-ray testing data. It also provides a description of the hardware and software used in the conduct of the VETA-I x-ray test program performed at the MSFC x-ray Calibration Facility (XRCF). These test results also serve to supply data and information to include in the TRW final report required by DPD 692, DR XC04. To provide an authoritative compendium of results, we have taken nine papers as published in the SPIE Symposium, 'Grazing Incidence X-ray/EUV Optics for Astronomy and Projection Lithography' and have reproduced them as the content of this report.

Brissenden, R. J. V.↗

NASA NTRS1993

Development and calibration of UV/VUV radiometric sources

A program exists at NIST to calibrate radiometric sources for the spectral range from 118-350 nm. These include deuterium lamps, hollow-cathode lamps, RF-excited dimer lamps, and wall-stabilized argon arcs. Sources have been calibrated for and used by researchers in solar physics, astrophysics, atmospheric physics (ozone measurements), magnetically controlled fusion, and photobiology. The argon arcs were developed in our laboratory, and provide intense sources of both radiance and irradiance. Calibrations are performed relative to two primary sources, a wall-stabilized hydrogen arc and a 12,000 K black-body line arc, both developed in our laboratory. Also we recently have begun periodic calibrations on the NIST storage ring, SURF II, to insure consistency between our respective radiometric bases. Various sources have been calibrated for space' applications, including several which are flyable. Also, some development and testing of radiometers for semiconductor lithography were recently carried out with an intense argon arc source.

Bridges, J. M.↗

NASA NTRS1992

Phase holograms in polymethyl methacrylate

A procedure is described for the fabrication of complex computer-generated phase holograms in polymethyl methacrylate (PMMA) by means of partial-exposure e-beam lithography and subsequent carefully controlled partial development. Following the development, the pattern appears (rendered in relief) in the PMMA, which then acts as the phase-delay medium. The devices fabricated were designed with 16 equal phase steps per retardation cycle, were up to 3 mm square, and consisted of up to 10 millions of 0.3-2.0-micron square pixels. Data files were up to 60 Mb-long, and the exposure times ranged to several hours. A Fresnel phase lens was fabricated with a diffraction-limited optical performance of 83-percent efficiency.

Maker, P. D.↗