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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Metal fluoride passivation coatings prepared by atomic layer deposition for Li-ion batteries

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO 2 . AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 Å) on LiCoO 2 significantly enhance stability relative to bare LiCoO 2 when cycled to 4.4 V. The coated LiCoO 2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Mane, Anil U.↗
DOE OSTI2020

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗
DOE OSTI2022

A new perspective on the initial hydrogenation of $\mathrm{TiFe_{0.9}M_{0.1}}$ ($\mathrm{M = V, Cr, Fe, Co, Ni}$) gained from surface oxide analysis and nucleation thermodynamics

Despite the promise of TiFe-based alloys as low-cost solid-state hydrogen storage materials with mild operating conditions and reasonable hydrogen capacity, their initial hydrogenation process is difficult, hindering broad utilization. The effect of alloying element on the initial hydrogenation kinetics of TiFe alloys, TiFe 0.9 M 0.1 (M = V, Cr, Fe, Co and Ni), was evaluated by analyzing changes to the passivating surface oxide layer that inhibits hydrogen permeation, as well as the ease of initial-stage hydrogen absorption into the underlying matrix. X-ray photoelectron spectroscopy and atom probe tomography revealed key variations in surface oxide compositions and thinning of the passivating oxide layer compared to pure TiFe, which suggests suppressed oxide growth by alloying-induced elemental redistribution. At the same time, density functional theory calculations predicted exothermic formation of hydride nuclei when alloying with V or Cr, as well as a reduced nucleation barrier when alloying with Co or Ni. Overall, these results are consistent with the observed experimental trend of the activation kinetics. We propose that improvements in activation kinetics of TiFe with alloying arises from the combined effect of reduced passivating oxide thickness and easier hydride nucleation, offering a starting point for alloy design strategies towards further improvement.

25 ENERGY STORAGE↗
DOE OSTI2024

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.

Wong, Matthew S.↗
DOE OSTI2023

In situ probing the origin of interfacial instability of Na metal anode

The unstable and fragile solid electrolyte interphase (SEI) has restricted the application of Na metal anodes. Despite numerous research efforts being put into understanding its chemical composition and physical properties, direct observation of its formation remains a challenge due to the lack of temporal and spatial resolution. Here, through combined in situ probing techniques, we exhibit two pivotal stages associated with SEI instability during the often -neglected formation process. It is revealed that Na metal that is not uniformly passivated at the initial (passivating) stage will trigger unrestricted electrolyte decomposition and homogeneous components distribution during the subsequent (growing) stage. SEI with homogenously distributed components is found to have higher solubility than that with a layered structure evolved from a compact passivation layer. Furthermore, through demonstrating an SEI dissolution model that is closely related to its formation process and compositional distribution, this work sheds light on an uncharted territory of Na metal batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

The tracer-BHR4 model for subgrid mixing layers

A model for the passive evolution of turbulent subgrid-scale mixing layers is developed based on the model of tracer-BHR model of Braun & Gore. The new model, tracer-BHR4, mainly differs from the previous iteration in that it aims to replicate the behavior of BHR4, instead of BHR3.1. The coefficients from BHR4 are used and a new model for mixing layer growth is developed to allow the tracer model to reproduce the de-mixing behavior seen in BHR4. Additionally, an improved timestep size controller is introduced. The new model is tested on problems containing Rayleigh-Taylor or Richtmyer-Meshkov mixing layers, and is able to reproduce the behavior of well resolved BHR4 simulations with reasonable accuracy.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Plasma-based edge terminations for gallium nitride power devices

A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

Zhao, Yuji↗
DOE OSTI2025

A quantitative figure of merit for battery SEI films and their use as functional solid-state electrolytes

As a key passivation film that governs battery operation, the solid electrolyte interphase (SEI) has long been credited for enabling high-performance batteries or blamed for their eventual death. However, qualitative descriptions of the SEI often found in the literature (e.g., “conductive,” “passivating”) highlight our incomplete understanding of this layer, where even the most basic properties foundational to SEI function remain difficult to measure. Here, we quantify SEI conductivities and SEI transference numbers using a separator-free Cu|SEI|Li architecture that treats the SEI as a functional solid-state electrolyte (SSE). We find that while any SEI property alone (e.g., electronic conductivity) is weakly correlated (R 2 < 0.67) with battery performance (e.g., Coulombic efficiency), a strong correlation (R 2 > 0.99) can be achieved by defining the “SEI cT number” as a product between the SEI transference number (T) and the ratio of SEI conductivities (c). Analogous to the thermoelectric figure of merit (i.e., zT ), SEI cT quantitatively benchmarks the holistic impact of SEI properties on battery performance and underscores the pitfalls of citing such properties in isolation. Perhaps most strikingly, we demonstrate that Li metal deposition and stripping at room temperature is possible in our separator-free Cu|SEI|Li cell, confirming that the SEI can function precisely as an SSE. Together, these results enrich our understanding of the SEI, not just as a passivation layer but as a functional structure that can potentially have important implications for solid-state batteries.

Science & Technology - Other Topics↗
DOE OSTI2022

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗
DOE OSTI2020

A passive model for the evolution of subgrid-scale instabilities in turbulent flow regimes

In this work, a zero-dimensional model for the development of turbulent mixing layers driven by Rayleigh–Taylor (RT) or Richtmyer–Meshkov (RM) instabilities is presented, for application in Reynolds-Averaged Navier–Stokes (RANS) simulations. The model approximates the behavior of the turbulent mixing layer at a passively advected tracer particle that sits on the material interface of interest in the simulation, and is used to provide initial conditions for the RANS model once the mixing layer width has developed to a size that may be resolved on the computational mesh. The model relies on approximations to the Besnard–Harlow–Rauenzahn (BHR) RANS closure equations and is thus consistent the turbulent development of the mixing layer, unlike previous models of this type which have focused on the early-time laminar development of RT or RM instabilities. These instabilities will often grow through an initially laminar state before developing into turbulence, and criteria for switching from an existing laminar model to the proposed turbulent model are considered. The proposed model reproduces the mixing layer development of RT and RM instabilities seen in mixed width resolving BHR RANS simulations to a reasonable degree of accuracy, and relaxes the need for the RANS simulation to resolve the mixed width as soon as the mixing layer becomes turbulent, which may be impractical in cases where the mixing layer grows through a wide range of scales.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Quantum cascade laser with monolithically integrated passive waveguide

A photonic integrated circuit device includes a passive waveguide section formed over a substrate, a quantum cascade laser (QCL) gain section formed over the substrate and adjacent to the passive waveguide section, and a taper section disposed between and in contact with each of the passive waveguide section and the QCL gain section. In some embodiments, the passive waveguide section includes a passive waveguide core layer disposed between a first cladding layer and a second cladding layer. In some examples, the QCL gain section includes a QCL active region disposed between a first confinement layer and a second confinement layer, where the QCL active region has a lower index of refraction than each of the first and second confinement layers. In some embodiments, the taper section is configured to optically couple the QCL gain section to the passive waveguide section.

Jung, Seungyong↗
DOE OSTI2021

Development of electronically passivating surfaces to enhance battery performance

For many decades, lithium metal batteries (LMBs) have been studied for their high energy density, though they suffer from high reactivity, which safety concerns such as explosions and fires. These events can occur as a result of degradation due to redox reactions and lithium morphology that evolve during cycling. Mostly, the failure is caused by the electrolyte degradation leading to the creation of a solid electrolyte interphase (SEI), which tends to induce electron leakage, lithium dendrite growth, and capacity decay. SEI formation is practically inevitable. This work investigated the minimization of degradation events by modifying different battery configurations. Modifications were made by exchanging electrolytes, electrode surfaces, and even annexing innovative components. Our goal is to achieve a configuration where Li-ion transfer is facilitated, and electron transfer is limited which would enable a longer lithium metal battery life cycle. When performing these modifications and testing their electrochemical performance, a current reduction was observed when the electrodes were spontaneously coated with preformed SEI. Herein several classes of artificial SEI layers are explored for their ability to form passivating layers through use of a redox active molecule.

25 ENERGY STORAGE↗
DOE OSTI2023

Estuarine nutrient pollution impact reduction assessment through euphotic zone avoidance/bypass considerations

The feasibility of reducing nutrient pollution impact by redirecting the effluent to depths below the euphotic zone was investigated for the deep estuarine Puget Sound region of the Salish Sea in the Pacific Northwest of America. The hypothesis tested was that the thickness of the outflow layer in deep estuaries may be greater than the euphotic zone depth, allowing a fraction of nutrients to be exported out passively through the layers immediately below. The euphotic zone depth in Puget Sound varies from 8 to 25 m while the depth of the outflow layer can reach up to ≈ 60 m. Outfall relocation strategies were tested on 99% of the anthropogenic nutrient loads currently delivered to Puget Sound. The impact was quantified using the previously established biophysical Salish Sea Model, using gross primary production and exposure to low dissolved oxygen (DO) levels as the metric (< 2 mg/L for hypoxia and < 5 mg/L for impairment). Eliminating nutrient pollution (above natural) from rivers and wastewater reduced hypoxia exposure by 8.1% and 11.2%, respectively. Relocating the outfalls to deeper waters resulted in improvements, but only in the sill-less sub-basins such as Whidbey, where hypoxia and DO impairment exposure decreased (7.9% and 6.8%, respectively). The presence of multiple sills and circulation cells in Puget Sound resulted in increased exposure and rendered nutrient bypass goals unfeasible as originally envisioned. However, an alternate nutrient export pathway was identified through bottom exchange flow out of Puget Sound via Whidbey Basin and Deception Pass. An unexpected reduction in the exchange outflow magnitude (≈ 4%) due additional (22%) freshwater discharged to the estuary bottom was also noted. The potential loss in circulation strength due to rerouting of natural surface freshwater through submerged deep-water outfalls is identified as a new unforeseen anthropogenic impact.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗
DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗
DOE OSTI2023

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗
DOE OSTI2022

Elementally Resolved Dissolution Kinetics of a Ni-Fe-Cr-Mn-Co Multi-Principal Element Alloy in Sulfuric Acid Using AESEC-EIS

Atomic emission spectroelectrochemistry (AESEC) combined with linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS) provided insights on both active and passive dissolution of Ni-Fe-Cr-Mn-Co multi-principal element alloy. Elemental dissolution rates measured by AESEC during open circuit experiment were in agreement with those extrapolated from AESEC-LSV and indicated element-specific dissolution tendencies. AESEC-EIS at open circuit potential showed nearly in-phase elemental dissolution during potential modulation which suggests direct dissolution from the alloy surface to the electrolyte. In the passive potential domain, no oscillation of the elemental dissolution rate was detected by AESEC-EIS, suggesting non-oxidative chemical dissolution of the outer layer of the passive film. In this case, dissolution at the passive film/electrolyte interface was equal to the metal oxidation rate (passive current density) at the metal/passive film interface and the passive current density was independent of potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗