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Combining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.
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Heavy ion irradiations have been performed: a) SEU varies little with angle of ion incidence b) MBU depend on the device orientation. The MBU response depends on the well orientation of the device. MRED simulation of an omni-directional GEO environment shows the MBU response to be a combination of response from different orientations. Testing and simulation must account for multiple orientations.
This report describes a modeling and simulation approach for disturbance patterns representative of the environment experienced by a digital system in an electromagnetic reverberation chamber. The disturbance is modeled by a multi-variate statistical distribution based on empirical observations. Extended versions of the Rejection Samping and Inverse Transform Sampling techniques are developed to generate multi-variate random samples of the disturbance. The results show that Inverse Transform Sampling returns samples with higher fidelity relative to the empirical distribution. This work is part of an ongoing effort to develop a resilience assessment methodology for complex safety-critical distributed systems.
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4 field programmable gate array (FPGA).
This is a NASA Electronics Parts and Packaging (NEPP) independent investigation to determine the single event destructive and transient susceptibility of the Microsemi RTG4 device (DUT).
No abstract available
We present SEU test and analysis of the Microsemi ProASIC3 FPGA. SEU Probability models are incorporated for device evaluation. Included is a comparison to the RTAXS FPGA illustrating the effectiveness of the overall testing methodology.
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The importance of Cosmic Rays on the performance of integrated circuits (IC's) in a space environment is evident in the upset rate of the Tracking and Data Relay Satellite (TDRS) launched in Apr. 1983. This satellite experiences a single-event-upset (SEU) per day which must be corrected from the ground. Such experience caused a redesign of the Galileo spacecraft with SEU resistant IC's. The solution to the SEU problem continues to be important as the complexity of spacecraft grows, the feature size of IC's decreases, and as space systems are designed with circuits fabricated at non-radiation hardened foundries. This paper describes an approach for verifying the susceptibility of CMOS latches to heavy-ion induced state changes. The approach utilizes alpha particles to induce the upsets in test circuits. These test circuits are standard cells that have offset voltages which sensitize the circuits to upsets. These results are then used to calculate the upsetability at operating voltages. In this study results are presented for the alpha particle upset of a six-transistor static random access memory (SRAM) cell. Then a methodology is described for the analysis of a standard-cell inverter latch.
This paper details the scientific objectives, experiment design, data collection method, and post flight analysis following the first two flights of the Static Computer Memory Integrity Testing (SCMIT) experiment. SCMIT is designed to detect soft-event upsets in passive magnetic memory. A soft-event upset is a change in the logic state of active or passive forms of magnetic memory, commonly referred to as a "Bitflip". In its mildest form a soft-event upset can cause software exceptions, unexpected events, start spacecraft safeing (ending data collection) or corrupted fault protection and error recovery capabilities. In it's most severe form loss of mission or spacecraft can occur. Analysis after the first flight (in 1991 during STS-40) identified possible soft-event upsets to 25% of the experiment detectors. Post flight analysis after the second flight (in 1997 on STS-87) failed to find any evidence of soft-event upsets. The SCMIT experiment is currently scheduled for a third flight in December 1999 on STS-101.
Loss of control has been identified as the leading cause of aircraft accidents in recent years. Efforts have been made to better equip pilots to deal with these types of events, commonly referred to as upsets. A major challenge in these endeavors has been recreating the motion environments found in flight as the majority of upsets take place well beyond the normal operating envelope of large aircraft. The Environmental Tectonics Corporation has developed a simulator motion base, called GYROLAB, that is capable of recreating the sustained accelerations, or G-forces, and motions of flight. A two part research study was accomplished that coupled NASA's Generic Transport Model with a GYROLAB device. The goal of the study was to characterize physiological effects of the upset environment and to demonstrate that a sustained motion based simulator can be an effective means for upset recovery training. Two groups of 25 Air Transport Pilots participated in the study. The results showed reliable signs of pilot arousal at specific stages of similar upsets. Further validation also demonstrated that sustained motion technology was successful in improving pilot performance during recovery following an extensive training program using GYROLAB technology.
A single-event effect (SEE) occurs when a single ionizing particle passing through an electronic device produces a detectable event in the device. The type of SEE most frequently discussed in the literature is a "single-node upset" problem in which an upset at a given node depends only on conditions seen by that node. In contrast, some devices are designed so that an upset becomes a "dual-node" problem in which a device upset depends on conditions simultaneously seen by two nodes. This report derives a method for estimating heavy-ion induced upset rates for the dual-node problem.
A simulator study of vortex encounters was conducted for a twin-engine, commercial, jet transport airplane encountering the vortex flow field of a heavy, four-engine, commercial, jet transport airplane in the final-approach configuration. The encounters were conducted with fixed controls and with a pilot using a state-of-the-art, manual-control system. Piloted encounters with the base-line vortex flow field out of ground effect (unattenuated) resulted in initial bank-angle excursions greater than 40 deg, coupled with initial sideslip-angle excursions greater than 10 deg. The severity of these initial upsets was significantly reduced when the vortex center was moved laterally or vertically away from the flight path of the encountering airplane. Smaller reductions occurred when the flow field was attenuated by the flight spoilers on the generating airplane. The largest reduction in the severity of the initial upsets, however, was from aging in ground effect. The severity of the initial upsets of the following airplane was relatively unaffected by the approach speed. Increasing the lift coefficient of the generating airplane resulted in an increase in the severity of the initial upsets.
A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.
A new logic family, which is immune to single event upsets, is described. Members of the logic family are capable of recovery, regardless of the shape of the upsetting event. Glitch propagation from an upset node is also blocked. Logic diagrams for an Inverter, Nor, Nand, and Complex Gates are provided. The logic family can be implemented in a standard, commercial CMOS process with no additional masks. DC, transient, static power, upset recovery and layout characteristics of the new family, based on a commercial 1 micron CMOS N-Well process, are described.
Report describes experimental study of use of microelectronic advanced laser scanner (MEALS) to cause single-event upsets (SEUs) in integrated logic circuits. Basic concepts of SEU testing by use of MEALS described in "Laser Scanner Tests for Single-Event Upsets" (NPO-18216), "Single-Event-Upset Laser Scanner With Optical Bias" (NPO-18217), and "More About Laser Scanner Tests for Single-Event Upsets" (NPO-18494). Study part of continuing effort to study SEU effects of ionizing radiation on such circuits and to use MEALS as relatively inexpensive SEU-prescreening laboratory apparatus serving as alternative to heavy-ion acclerator.