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At least 217 records · Page 12

Measurements by a Vector Network Analyzer at 325 to 508 GHz

Recent experiments were performed in which return loss and insertion loss of waveguide test assemblies in the frequency range from 325 to 508 GHz were measured by use of a swept-frequency two-port vector network analyzer (VNA) test set. The experiments were part of a continuing effort to develop means of characterizing passive and active electronic components and systems operating at ever increasing frequencies. The waveguide test assemblies comprised WR-2.2 end sections collinear with WR-3.3 middle sections. The test set, assembled from commercially available components, included a 50-GHz VNA scattering- parameter test set and external signal synthesizers, augmented with recently developed frequency extenders, and further augmented with attenuators and amplifiers as needed to adjust radiofrequency and intermediate-frequency power levels between the aforementioned components. The tests included line-reflect-line calibration procedures, using WR-2.2 waveguide shims as the "line" standards and waveguide flange short circuits as the "reflect" standards. Calibrated dynamic ranges somewhat greater than about 20 dB for return loss and 35 dB for insertion loss were achieved. The measurement data of the test assemblies were found to substantially agree with results of computational simulations.

Fung, King Man↗

Waveguide Power-Amplifier Module for 80 to 150 GHz

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Samoska, Lorene↗

MMIC Replacement for Gunn Diode Oscillators

An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

Crowe, Thomas W.↗

Low-Noise Amplifier for 100 to 180 GHz

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

Kangaslahti, Pekka↗

Covert laser remote sensing and vibrometry

Designs of single-beam laser vibrometry systems and methods. For example, a method for detecting vibrations of a target based on optical sensing is provided to include operating a laser to produce a laser probe beam at a laser frequency and modulated at a modulation frequency onto a target; collecting light at or near the laser to collect light from the target while the target is being illuminated by the laser probe beam through an optical receiver aperture; using a narrow-band optical filter centered at the laser frequency to filter light collected from the optical receiver aperture to transmit light at the laser frequency while blocking light at other frequencies; using an optical detector to convert filtered light from the narrow-band optical filter to produce a receiver electrical signal; using a lock-in amplifier to detect and amplify the receiver electrical signal at the modulation frequency while rejecting signal components at other frequencies to produce an amplified receiver electrical signal; processing the amplified receiver electrical signal to extract information on vibrations of the target carried by reflected laser probe beam in the collected light; and controlling optical power of the laser probe beam at the target to follow optical power of background illumination at the target.

Maleki, Lutfollah↗

Integrated CMOS RF amplifier

This paper reports an integrated 2.0 micron CMOS RF amplifier designed for amplification in the 420-450 MHz frequency band. Design techniques are shown for the test amplifier configuration. Problems of decreased amplifier bandwidth, gain element instability, and low Q values for the inductors were encountered. Techniques used to overcome these problems are discussed. Layouts of the various elements are described and a summary of the simulation results are included. Test circuits have been submitted to MOSIS for fabrication.

Charity, C.↗

A dual-amplifier hot-wire anemometer

The conceptual design of a dual-amplifier constant-temperature hot-wire anemometer is described. This hot-wire anemometer consists of three basic independent modules: a Wheatstone bridge in which the hot wire is one of its arms, an error-correction amplifier, and a voltage-controlled current source. The last two modules constitute the feedback network of this hot-wire anemometer. Thus the output voltage across the wire is a true function of the instantaneous changes in the wire resistance induced by the cooling effect of the flow. The dual-amplifier is capable of reaching relatively high frequency response through adequate selection of its active elements. Suitable gain of the error-correction amplifier and proper choice of the transfer function of the current source has yielded a frequency bandwidth up to 200 kHz.

Sadeh, W. Z.↗

Isolation Amplifier Based On Sigma-Delta Modulation

Improved isolation amplifier transmits dc or low-frequency analog signal by use of digital pulses. Relatively imprecise digital pulses convey analog signal with relatively high precision. Amplifier implements sigma-delta modulation scheme. Circuit used wherever conventional amplifier needed. Includes medical instrumentation, switching-type power supplies, and other applications in which input voltages must be measured in presence of large common-mode voltages.

Harres, Daniel N.↗

Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

Kangaslahti, Pekka P.↗

High stability buffered phase comparator

A low noise RF signal phase comparator comprised of two high stability driver buffer amplifiers driving a double balanced mixer which operate to generate a beat frequency between the two RF input signals coupled to the amplifiers from the RF sources is described. The beat frequency output from the mixer is applied to a low noise zero crossing detector which is the phase difference between the two RF inputs. Temperature stability is provided by mounting the amplifiers and mixer on a common circuit board with the active circuit elements located on one side of a circuit board and the passive circuit elements located on the opposite side. A common heat sink is located adjacent the circuit board. The active circuit elements are embedded into the bores of the heat sink which slows the effect of ambient temperature changes and reduces the temperature gradients between the active circuit elements, thus improving the cancellation of temperature effects. The two amplifiers include individual voltage regulators, which increases RF isolation.

Adams, W. A.↗

Fiber-optic delay-line stabilization of heterodyne optical signal generator and method using same

The present invention is a laser heterodyne frequency generator system with a stabilizer for use in the microwave and millimeter-wave frequency ranges utilizing a photonic mixer as a photonic phase detector in a stable optical fiber delay-line. Phase and frequency fluctuations of the heterodyne laser signal generators are stabilized at microwave and millimeter wave frequencies by a delay line system operating as a frequency discriminator. The present invention is free from amplifier and mixer 1/.function. noise at microwave and millimeter-wave frequencies that typically limit phase noise performance in electronic cavity stabilized electronic oscillators. Thus, 1/.function. noise due to conventional mixers is eliminated and stable optical heterodyne generation of electrical signals is achieved.

Logan, Ronald T.↗

An advanced geostationary communications platform

A large geostationary communications platform can offer many attractive possibilities for providing lower cost communications. The platform payload concept described in this paper attempts to exploit these possibilities. The use of a combination of spot and wide-area coverage beams accommodates users in both high- and low-density population areas, and provides a good degree of frequency reuse. A standard channel bandwidth, used for most traffic, facilitates interconnectivity among C-, Ku-, and Ka-band users who may all access the platform. Adoption of a 36-MHz channel bandwidth leads to transmission rates that would be easily handled by low-cost terminals providing direct customer premises service. This also lends itself well to a solution using a large number of solid-state power amplifiers operating in all three frequency bands and sharing a common, redundant, conditioned power supply.

Hawkes, Thaddeus A.↗

Coherent Doppler Lidar for Measuring Altitude, Ground Velocity, and Air Velocity of Aircraft and Spaceborne Vehicles

A Doppler lidar sensor system includes a laser generator that produces a highly pure single frequency laser beam, and a frequency modulator that modulates the laser beam with a highly linear frequency waveform. A first portion of the frequency modulated laser beam is amplified, and parts thereof are transmitted through at least three separate transmit/receive lenses. A second portion of the laser beam is used as a local oscillator beam for optical heterodyne detection. Radiation from the parts of the laser beam transmitted via the transmit/receive lenses is received by the respective transmit/receive lenses that transmitted the respective part of the laser beam. The received reflected radiation is compared with the local oscillator beam to calculate the frequency difference there between to determine various navigational data.

Amzajerdian, Farzin↗

The 20 GHz spacecraft IMPATT solid state transmitter

The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.

Best, T.↗

Automatic level control circuit

An automatic level control circuit for an operational amplifier for minimizing spikes or instantaneous gain of the amplifier at a low period wherein no signal is received on the input is provided. The apparatus includes a multibranch circuit which is connected between an output terminal and a feedback terminal. A pair of zener diodes are connected back to back in series with a capacitor provided in one of the branches. A pair of voltage dividing resistors are connected in another of the branches and a second capacitor is provided in the remaining branch of controlling the high frequency oscillations of the operational amplifier.

Toole, P. C.↗

A 20-GHz IMPATT transmitter

The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band. The development effort involved a variety of disciplines including IMPATT device development, circulator design, simple and multiple diode circuits designs, and amplifier integration and test.

Chan, J. L.↗

Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

Radisic, Vesna↗